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The deposition process of ZnO films doped with Eu and functionalized with PD
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| dc.contributor.author | LUPAN, Cristian | |
| dc.contributor.author | TROFIM, Viorel | |
| dc.date.accessioned | 2023-11-28T15:00:07Z | |
| dc.date.available | 2023-11-28T15:00:07Z | |
| dc.date.issued | 2020 | |
| dc.identifier.citation | LUPAN, Cristian, TROFIM, Viorel. The deposition process of ZnO films doped with Eu and functionalized with PD. In: The 24th international exhibition of inventions INVENTICA 2020, Iasi, Romania, 2020, p. 420. ISSN:1844-7880. | en_US |
| dc.identifier.issn | 1844-7880 | |
| dc.identifier.uri | http://repository.utm.md/handle/5014/25054 | |
| dc.description | Patent / patent application Nr. 1974 from 05.11.2019. Domain: Industrial equipment and units; Security, protection, safety – antiterrorism, disasters and accidents. | en_US |
| dc.description.abstract | Invenţia se referă la tehnologia de depunere a peliculelor din semiconductori oxizi, în particular la un procedeu de obținere a peliculelor ZnO:Eu3+, cu aplicarea tratamentului fotonic rapid (T=650 °C, t=60s), care pot fi aplicate la confecționarea senzorilor de gaze obținând sensibilitatea la concentrația de 100 ppm H2 la temperatura camerei și la temperatura de operare de 250 oC . | en_US |
| dc.description.abstract | The invention relates to the technology for deposition of semiconductor oxide films, in particular to the process of obtaining of ZnO:Eu3+ films, with application of rapid thermal annealing (T=650 °C, t=60s), with can be applied to the manufacture of gas sensors obtaining sensibility for 100 ppm H2 gas at room temperature and at operating temperature of 250 oC. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Technical University "Gheorghe Asachi" of Iași | en_US |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
| dc.subject | semiconductori oxizi | en_US |
| dc.subject | pelicule | en_US |
| dc.subject | tratament fotonic rapid | en_US |
| dc.subject | semiconductor oxide | en_US |
| dc.subject | films | en_US |
| dc.subject | rapid thermal annealing | en_US |
| dc.title | The deposition process of ZnO films doped with Eu and functionalized with PD | en_US |
| dc.type | Article | en_US |
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2020
The 24th International Exhiibiitiion of Inventiions, 29th - 31st July
Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States