The Nature of the Edge Emission Bands of n-CdSe/mica Epilayers

CHUKITA, V. I.

Home
→
Facultatea Electronică şi Telecomunicaţii
→
Conferinţa Internaţională "Telecomunicaţii, Electronică şi Informatică" - ICTEI
→
2015
→
View Item

dc.contributor.author	CHUKITA, V. I.
dc.date.accessioned	2020-11-29T15:46:45Z
dc.date.available	2020-11-29T15:46:45Z
dc.date.issued	2015
dc.identifier.citation	CHUKITA, V. I. The Nature of the Edge Emission Bands of n-CdSe/mica Epilayers. In: Telecomunicaţii, Electronică şi Informatică: proc. of the 5th intern. conf., May 20-23, 2015. Chişinău, 2015, pp. 169-170. ISBN 978-9975-45-377-6.	en_US
dc.identifier.isbn	978-9975-45-377-6
dc.identifier.uri	http://repository.utm.md/handle/5014/11832
dc.description.abstract	We study the spectra of the boundary cathodoluminescence of n-CdSe undoped epilayers grown in a quasi-closed system on mica cristals. It was established that in the layers obtained at the evaporation temperature of 650° C substrate temperature of 480° C and the density of the excitation current j = 0.5 A/cm2 on the long wave wing of the edge emission bands appear equidistant lines associated with LO - phonon replicas non-phonon line, due to the radiative capture of the band electrons by acceptor Vcd - center of the CdSe crystals.	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	acceptor centers	en_US
dc.subject	cathodoluminescence	en_US
dc.subject	Alentsev-Fock method	en_US
dc.subject	edge emission	en_US
dc.subject	radiative recombination	en_US
dc.subject	cadmium vacancies	en_US
dc.subject	epilayer	en_US
dc.title	The Nature of the Edge Emission Bands of n-CdSe/mica Epilayers	en_US
dc.type	Article	en_US