dc.contributor.author | ХАДЖИ, П. И. | |
dc.contributor.author | МАРКОВ, Д. А. | |
dc.contributor.author | НАДЬКИН, Л. Ю. | |
dc.date.accessioned | 2020-11-29T18:58:21Z | |
dc.date.available | 2020-11-29T18:58:21Z | |
dc.date.issued | 2015 | |
dc.identifier.citation | ХАДЖИ, П. И., МАРКОВ, Д. А., НАДЬКИН, Л. Ю. Усиление и Лазерная Генерация на М-Полосе Люминесценции. In: Telecomunicaţii, Electronică şi Informatică: proc. of the 5th intern. conf., May 20-23, 2015. Chişinău, 2015, pp. 269-271. ISBN 978-9975-45-377-6. | en_US |
dc.identifier.isbn | 978-9975-45-377-6 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/11851 | |
dc.description.abstract | A new lasing mechanism for semiconductors like CuCl, CuBr is proposed based on the two-photon pumping of biexcitons from the ground state of the crystal and generation or amplification of light in the region of M-band of luminescence due to the optical exciton-biexciton conversion. It was shown that the net gain essentially depends on the level of two-photon pumping and rapidly decreases deep into the crystal due to the spatial depletion of pump radiation. | en_US |
dc.language.iso | ru | en_US |
dc.publisher | Technical University of Moldova | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | M-luminescence band | en_US |
dc.subject | excitons | en_US |
dc.subject | biexcitons | en_US |
dc.title | Усиление и Лазерная Генерация на М-Полосе Люминесценции | en_US |
dc.type | Article | en_US |
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