dc.contributor.author | PYSHKIN, Sergei L. | |
dc.date.accessioned | 2020-12-09T10:04:22Z | |
dc.date.available | 2020-12-09T10:04:22Z | |
dc.date.issued | 2017 | |
dc.identifier.citation | PYSHKIN, Sergei L. Advanced Light-Emissive Device Structures. In: Microelectronics and Computer Science: proc. of the 9th intern. conf., October 19-21, 2017. Chişinău, 2017, p. 504. ISBN 978-9975-4264-8-0. | en_US |
dc.identifier.isbn | 978-9975-4264-8-0 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/12013 | |
dc.description.abstract | Here is discussed the development of advanced and resource-saving method for fabrication of semiconductor materials having unique and close to ideal properties for optoelectronic devices. This work could lead to significant advances in understanding of semiconductor materials, enhancements to their performance, and the growth of high impact optoelectronics companies in the USA and Moldova. The noted project is unique because I first have prepared a series of semiconductor samples as part of my graduate research more than 50 years ago and over those years, the samples have been repeatedly studied in research centers of Italy, Romania, Russia, the United States, and significant improvement in their quality and interesting properties were noted. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Technical University of Moldova | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | resource-saving method | en_US |
dc.subject | semiconductor materials | en_US |
dc.subject | ideal properties | en_US |
dc.subject | optoelectronic devices | en_US |
dc.title | Advanced Light-Emissive Device Structures | en_US |
dc.type | Article | en_US |
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