Photoelectrical properties of a Au-CdIn2S4 surface-barrier diode

RADAUTSAN, S. I.; MOLODYAN, I. P.; BULYARSKII, S. V.; SYRBU, N. N.; TEZLEVAN, V. E.

dc.contributor.author	RADAUTSAN, S. I.
dc.contributor.author	MOLODYAN, I. P.
dc.contributor.author	BULYARSKII, S. V.
dc.contributor.author	SYRBU, N. N.
dc.contributor.author	TEZLEVAN, V. E.
dc.date.accessioned	2021-01-05T17:07:40Z
dc.date.available	2021-01-05T17:07:40Z
dc.date.issued	1974
dc.identifier.citation	RADAUTSAN, S. I., MOLODYAN, I. P., BULYARSKII, S. V. Photoelectrical properties of a Au-CdIn2S4 surface-barrier diode. In: Physica Status Solidi (a), 1974, V. 21, N. 2, pp. 617-622. ISSN 0869-5652.	en_US
dc.identifier.uri	https://doi.org/10.1002/pssa.2210210226
dc.identifier.uri	http://repository.utm.md/handle/5014/12381
dc.description	Access full text – https://doi.org/10.1002/pssa.2210210226	en_US
dc.description.abstract	The photoelectrical properties of Schottky barriers Au-CdIn2S4 in a broad energy region have been considered. The optical direct and indirect transitions and the spin-orbit splittings of zones Γ15(Γ7), Γ15(Γ8) in L1(L6) and Γ1(Γ6) have been revealed. The fine structure in the differential spectra of photoconductivity due to the phonons at the edge and in the centre of the Brillouin zone were observed.	en_US
dc.language.iso	en	en_US
dc.publisher	WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	diodes	en_US
dc.subject	Schottky barriers	en_US
dc.subject	photoconductivity	en_US
dc.subject	phonons	en_US
dc.title	Photoelectrical properties of a Au-CdIn2S4 surface-barrier diode	en_US
dc.type	Article	en_US