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600 GHz GaAs Schottky diode mixer in split-block technology

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dc.contributor.author SCHUR, J.
dc.contributor.author BIBER, S.
dc.contributor.author COJOCARI, O.
dc.contributor.author SCHMIDT, L.-P.
dc.contributor.author HARTNAGEL, H.-L.
dc.date.accessioned 2021-01-14T16:49:01Z
dc.date.available 2021-01-14T16:49:01Z
dc.date.issued 2013
dc.identifier.citation SCHUR, J., BIBER, S., COJOCARI, O. et al. 600 GHz GaAs Schottky diode mixer in split-block technology. In: 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics: proceedings, 19-23 Sept. 2005, Williamsburg, USA, 2005, V. 2, pp. 469-470. en_US
dc.identifier.uri https://doi.org/10.1109/ICIMW.2005.1572616
dc.identifier.uri http://repository.utm.md/handle/5014/12447
dc.description Acces full text: https://doi.org/10.1109/ICIMW.2005.1572616 en_US
dc.description.abstract In this paper we present measurement results of a micro-machined split-block waveguide mixer for 600 GHz. The mixer implements a planar GaAs Schottky diode on a quartz substrate. Two different diode designs used for this mixer design are compared. The overall performance of the waveguide mixer is demonstrated by measurements of the mixer in a quasi-optical setup at 600 GHz. In this setup we are able to measure single sideband conversion losses of 9-14 dB at 600 GHz and voltage responsivities of 421-1690 mV/mW. en_US
dc.language.iso en en_US
dc.publisher IEEE en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject diodes en_US
dc.subject gallium arsenide en_US
dc.subject Schottky diodes en_US
dc.subject frequency en_US
dc.subject microwave technology en_US
dc.subject horn antennas en_US
dc.subject semiconductor diodes en_US
dc.subject milling en_US
dc.subject substrates en_US
dc.subject parasitic capacitance en_US
dc.title 600 GHz GaAs Schottky diode mixer in split-block technology en_US
dc.type Article en_US


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