dc.contributor.author | COLIBABA, G.V. | |
dc.contributor.author | RUSNAC, D. | |
dc.contributor.author | FEDOROV, V. | |
dc.contributor.author | COSTRIUCOVA, N. | |
dc.contributor.author | MONAICO, E.V. | |
dc.contributor.author | POTLOG, T. | |
dc.date.accessioned | 2021-11-11T13:26:01Z | |
dc.date.available | 2021-11-11T13:26:01Z | |
dc.date.issued | 2021 | |
dc.identifier.citation | COLIBABA, G.V., RUSNAC, D., FEDOROV, V., ș. a. Highly Conductive ZnO Thin Films Deposited Using CVT Ceramics as Magnetron Targets. In: ICNMBE-2021: the 5th International Conference on Nanotechnologies and Biomedical Engineering, November 3-5, 2021: Program and abstract book. Chişinău, 2021, p. 63. ISBN 978-9975-72-592-7. | en_US |
dc.identifier.isbn | 978-9975-72-592-7 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/17973 | |
dc.description | Only Abstract. | en_US |
dc.description.abstract | Sintering of ZnO+Me2O3 (Me = Al, Ga, In) powder via chemical vapor transport based on HCl has been developed. The electrical properties of ZnO thin films obtained by DC magnetron sputtering of ZnO ceramic targets have been studied. Transparency, morphology, crystallinity and crystallite size of thin films have also been investigated. ZnO:Ga thin films with a resistivity of 2.510–4 cm have been successfully obtained. The films doped with Al have lower conductivity due to weak sputtering of insoluble Al2O3 dielectric inclusions in ceramics. In the case of sintering of ZnO together with In2O3, a significant loss of the doping material is observed. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Universitatea Tehnică a Moldovei | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | ZnO Thin Films | en_US |
dc.subject | ceramics | en_US |
dc.subject | magnetron sputtering | en_US |
dc.title | Highly Conductive ZnO Thin Films Deposited Using CVT Ceramics as Magnetron Targets | en_US |
dc.type | Article | en_US |
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