dc.contributor.author | COLIBABA, G.V. | |
dc.contributor.author | COSTRIUCOVA, N. | |
dc.contributor.author | RUSNAC, D. | |
dc.contributor.author | BUSUIOC, S. | |
dc.contributor.author | MONAICO, E.V. | |
dc.date.accessioned | 2021-11-15T11:28:14Z | |
dc.date.available | 2021-11-15T11:28:14Z | |
dc.date.issued | 2021 | |
dc.identifier.citation | COLIBABA, G.V., COSTRIUCOVA, N., RUSNAC, D., BUSUIOC, S., MONAICO, E.V. Wettability of Highly Conductive ZnO:Ga:Cl CVT Ceramics with Various Ga Content. In: ICNMBE-2021: the 5th International Conference on Nanotechnologies and Biomedical Engineering, November 3-5, 2021: Program and abstract book. Chişinău, 2021, p. 114. ISBN 978-9975-72-592-7. | en_US |
dc.identifier.isbn | 978-9975-72-592-7 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/18052 | |
dc.description | Only Abstract. | en_US |
dc.description.abstract | ZnO:Ga:Cl ceramics were sintered using chemical vapor transport technique. Ga content was varied in a range of 0 10 mol %. The wettability of unpolished and polished surface of ZnO:Ga:Cl ceramics was investigated. The polished and etched surface of ZnO ceramics is in a hydrophilic state. The presence of Ga impurity leads to a strong increase in the water contact angle to 131. This behavior is attributed to a high concentration of free electrons, which suppress the formation of intrinsic surface defects acting as traps for water molecules. Air pockets on unpolished surfaces of ZnO:Ga:Cl ceramics are an additional factor that increases the water contact angle. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Universitatea Tehnică a Moldovei | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | ZnO:Ga:Cl ceramics | en_US |
dc.subject | Ga impurity | en_US |
dc.subject | free electrons | en_US |
dc.title | Wettability of Highly Conductive ZnO:Ga:Cl CVT Ceramics with Various Ga Content | en_US |
dc.type | Article | en_US |
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