dc.contributor.author | SIRKELI, V. P. | |
dc.contributor.author | YILMAZOGLU, O. | |
dc.contributor.author | KÜPPERS, F. | |
dc.contributor.author | HARTNAGEL, H. L. | |
dc.date.accessioned | 2022-05-16T10:00:44Z | |
dc.date.available | 2022-05-16T10:00:44Z | |
dc.date.issued | 2015 | |
dc.identifier.citation | SIRKELI, V. P., YILMAZOGLU, O., KÜPPERS, F. et al. Enhanced efficiency of p-GaN/n-ZnO light-emitting diodes by using NiO and ZnSe interlayers. In: Science and Society- the Use of Light: Workshop în cadrul conf. ICNBME - International Conference on Nanotechnologies and Biomedical Engineering, 24-25 Sept, 2015, Chişinău, Republic of Moldova: Abstracts, 2015, p. 37. | en_US |
dc.identifier.uri | http://repository.utm.md/handle/5014/20301 | |
dc.description | Only Abstract | en_US |
dc.description.abstract | We report the results from numerical simulations of p-GaN/n-ZnO light-emitting diodes (LEDs) with different architectures. p-GaN/n-ZnO, p-GaN/p-NiO/n-ZnO, and p-GaN/p-NiO/n-ZnSe/n-ZnO LED structures have been examinated using one-dimensional (1D) Schrödinger-Poisson solver simulator. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Technical University of Moldova | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | light-emitting diodes | en_US |
dc.subject | electroluminescence devices | en_US |
dc.subject | gallium nitride | en_US |
dc.subject | zinc oxide | en_US |
dc.subject | nickel oxide | en_US |
dc.subject | zinc selenide | en_US |
dc.subject | LED devices | en_US |
dc.title | Enhanced efficiency of p-GaN/n-ZnO light-emitting diodes by using NiO and ZnSe interlayers | en_US |
dc.type | Article | en_US |
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