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Ground and Excited States of Excitons in GaSe Single Crystals

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dc.contributor.author CRISTEA, Ecaterina
dc.contributor.author STAMOV, Ivan
dc.contributor.author ZALAMAI, Victor
dc.date.accessioned 2023-11-03T07:25:27Z
dc.date.available 2023-11-03T07:25:27Z
dc.date.issued 2023
dc.identifier.citation CRISTEA, Ecaterina, STAMOV, Ivan, ZALAMAI, Victor. Ground and Excited States of Excitons in GaSe Single Crystals. In: 6th International Conference on Nanotechnologies and Biomedical Engineering: proc. of ICNBME-2023, 20–23, 2023, Chisinau, vol. 1: Nanotechnologies and Nano-biomaterials for Applications in Medicine, 2023, p. 166-173. ISBN 978-3-031-42774-9. e-ISBN 978-3-031-42775-6. en_US
dc.identifier.isbn 978-3-031-42774-9
dc.identifier.isbn 978-3-031-42775-6
dc.identifier.uri https://doi.org/10.1007/978-3-031-42775-6_18
dc.identifier.uri http://repository.utm.md/handle/5014/24622
dc.description Acces full text - https://doi.org/10.1007/978-3-031-42775-6_18 en_US
dc.description.abstract In this work photoluminescence, reflection and absorption spectra of GaSe single crystals were studied in a wide temperature range (10 – 300 K). The presence of series of excitonic levels in the region E > Eg was shown. At excitation by 448 nm laser of GaSe crystal electrons were resonantly excited from V1(Γ1) band to C1(Γ6) and C2(Γ5) bands. The luminescence from excitonic levels (nA = 1, 2 … 5) of conduction band C1(Γ6) to valence band V1(Γ1) was observed. Recombination from excitonic level of C1(Γ6) band to V2 and V3 bands (maxima nB = 1–2.1751 eV and nB = 2–2.2222 eV) and to V4 and V5 bands (maxima nC = 1 – 2.311 eV and nC = 2–2.350 eV) was observed. Luminescence maxima nD = 1 (2.399 eV) and nD = 2 (2.434 eV) attributed to transitions between C1 – V6, V7 bands and E3 maximum caused by recombination C2 – V1 were found out. A model of energy bands responsible for observed transitions was suggested. en_US
dc.language.iso en en_US
dc.publisher Springer Nature Switzerland en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject gallium selenide en_US
dc.subject excitonic states en_US
dc.subject band structures en_US
dc.subject photoluminescence en_US
dc.subject wavelength modulation reflection spectra en_US
dc.title Ground and Excited States of Excitons in GaSe Single Crystals en_US
dc.type Article en_US


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  • 2023
    6th International Conference on Nanotechnologies and Biomedical Engineering, September 20–23, 2023, Chisinau, Moldova

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Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

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