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Zinc Oxide – The Material of Future Optoelectronics and Photonics

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dc.contributor.author TIGINYANU, I.M.
dc.contributor.author URSAKI, V.V.
dc.contributor.author RUSU, E.V.
dc.date.accessioned 2024-01-04T11:05:30Z
dc.date.available 2024-01-04T11:05:30Z
dc.date.issued 2009
dc.identifier.citation TIGINYANU, I.M., URSAKI, V.V., RUSU, E.V. Zinc Oxide – The Material of Future Optoelectronics and Photonics. In: Microelectronics and Computer Science: proc. 6th International Conference, 1-3 Oct. 2009, Chişinău, Republica Moldova, vol. 1, 2009, pp. 142-146. ISBN 978-9975-45-045-4. ISBN 978-9975-45-122-2 (vol. 1). en_US
dc.identifier.isbn 978-9975-45-045-4
dc.identifier.isbn 978-9975-45-122-2
dc.identifier.uri http://repository.utm.md/handle/5014/25688
dc.description.abstract In this review paper we present new possibilities for nanostructuring of ZnO grown by MOCVD, CVD and electrochemical deposition. The prospects for future applications of ZnO are evaluated on the basis of laser developments. We demonstrate, in particular, lasing effects in both individual ZnO nanorods, microtetrapods and various spatial architectures. We show that nanostructuring leads to a considerable enhancement of the radiation hardness of the material. A comparative analysis of the properties of ZnO and GaN is realized and important advantages of ZnO are identified. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.relation.ispartof Proceeding of the 6th International Conference on "Microelectronics and Computer Science", oct.1-3, 2009, Chişinău, Moldova
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject nanostructuring en_US
dc.subject Zinc Oxide en_US
dc.subject optoelectronics en_US
dc.title Zinc Oxide – The Material of Future Optoelectronics and Photonics en_US
dc.type Article en_US


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