dc.contributor.author | TIGINYANU, I.M. | |
dc.contributor.author | URSAKI, V.V. | |
dc.contributor.author | RUSU, E.V. | |
dc.date.accessioned | 2024-01-04T11:05:30Z | |
dc.date.available | 2024-01-04T11:05:30Z | |
dc.date.issued | 2009 | |
dc.identifier.citation | TIGINYANU, I.M., URSAKI, V.V., RUSU, E.V. Zinc Oxide – The Material of Future Optoelectronics and Photonics. In: Microelectronics and Computer Science: proc. 6th International Conference, 1-3 Oct. 2009, Chişinău, Republica Moldova, vol. 1, 2009, pp. 142-146. ISBN 978-9975-45-045-4. ISBN 978-9975-45-122-2 (vol. 1). | en_US |
dc.identifier.isbn | 978-9975-45-045-4 | |
dc.identifier.isbn | 978-9975-45-122-2 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/25688 | |
dc.description.abstract | In this review paper we present new possibilities for nanostructuring of ZnO grown by MOCVD, CVD and electrochemical deposition. The prospects for future applications of ZnO are evaluated on the basis of laser developments. We demonstrate, in particular, lasing effects in both individual ZnO nanorods, microtetrapods and various spatial architectures. We show that nanostructuring leads to a considerable enhancement of the radiation hardness of the material. A comparative analysis of the properties of ZnO and GaN is realized and important advantages of ZnO are identified. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Technical University of Moldova | en_US |
dc.relation.ispartof | Proceeding of the 6th International Conference on "Microelectronics and Computer Science", oct.1-3, 2009, Chişinău, Moldova | |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | nanostructuring | en_US |
dc.subject | Zinc Oxide | en_US |
dc.subject | optoelectronics | en_US |
dc.title | Zinc Oxide – The Material of Future Optoelectronics and Photonics | en_US |
dc.type | Article | en_US |
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