dc.contributor.author | POTLOG, Tamara | |
dc.contributor.author | SPALATU, Nicolaie | |
dc.date.accessioned | 2024-01-05T07:33:44Z | |
dc.date.available | 2024-01-05T07:33:44Z | |
dc.date.issued | 2009 | |
dc.identifier.citation | POTLOG, Tamara, SPALATU, Nicolaie. Electrical behavior of the CdTe heterojunction cells fabricated on polyimide substrates. In: Microelectronics and Computer Science: proc. 6th International Conference, 1-3 Oct. 2009, Chişinău, Republica Moldova, vol. 1, 2009, pp. 47-50. ISBN 978-9975-45-045-4. ISBN 978-9975-45-122-2 (vol. 1). | en_US |
dc.identifier.isbn | 978-9975-45-045-4 | |
dc.identifier.isbn | 978-9975-45-122-2 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/25716 | |
dc.description.abstract | Hot-wall technique has been used for preparation of CdTe heterojunction cells on the polyimide substrates covered with ITO layer. Carrier transport mechanisms of the heterojunction cells are briefly discussed. It has been established that tuneling recombination current flows through states near or at the interface with a thermal activation energy 0,34 eV; 0,33 eV; 0, 34 eV; for applied bias voltages 0,1V; 0,2 V and 0,3 V; respectively. The reverse current is limited by the carrier generation process. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Technical University of Moldova | en_US |
dc.relation.ispartof | Proceeding of the 6th International Conference on "Microelectronics and Computer Science", oct.1-3, 2009, Chişinău, Moldova | |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | polyimide substrates | en_US |
dc.subject | heterojunction cells | en_US |
dc.title | Electrical behavior of the CdTe heterojunction cells fabricated on polyimide substrates | en_US |
dc.type | Article | en_US |
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