dc.contributor.author | ARAMĂ, E. | |
dc.contributor.author | GHEORGHIŢĂ, E. | |
dc.contributor.author | PÎNTEA, V. | |
dc.date.accessioned | 2024-01-05T07:41:00Z | |
dc.date.available | 2024-01-05T07:41:00Z | |
dc.date.issued | 2009 | |
dc.identifier.citation | ARAMĂ, E., GHEORGHIŢĂ, E., PÎNTEA, V. Structura spectrelor de iradiere a politipului 2 4 ZnIn S la 80 K. In: Microelectronics and Computer Science: proc. 6th International Conference, 1-3 Oct. 2009, Chişinău, Republica Moldova, vol. 1, 2009, pp. 51-52. ISBN 978-9975-45-045-4. ISBN 978-9975-45-122-2 (vol. 1). | en_US |
dc.identifier.isbn | 978-9975-45-045-4 | |
dc.identifier.isbn | 978-9975-45-122-2 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/25717 | |
dc.description.abstract | In this article on the describe structure spectrum of radiation polities of 2 4 ZnIn S at 80 K relative thickness of plaque. Is proposed the optical transition energy for recombination holder with unbalanced load levels specifically determined experimentally (0,11 and 0,25 eV de la Ev). On the basis of the results are interpreted. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Technical University of Moldova | en_US |
dc.relation.ispartof | Proceeding of the 6th International Conference on "Microelectronics and Computer Science", oct.1-3, 2009, Chişinău, Moldova | |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | monocrystals | en_US |
dc.subject | semiconductors | en_US |
dc.subject | optoelectronics elements | en_US |
dc.subject | radiation polities | en_US |
dc.subject | sensors | en_US |
dc.title | Structura spectrelor de iradiere a politipului 2 4 ZnIn S la 80 K | en_US |
dc.type | Article | en_US |
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