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Structura spectrelor de iradiere a politipului 2 4 ZnIn S la 80 K

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dc.contributor.author ARAMĂ, E.
dc.contributor.author GHEORGHIŢĂ, E.
dc.contributor.author PÎNTEA, V.
dc.date.accessioned 2024-01-05T07:41:00Z
dc.date.available 2024-01-05T07:41:00Z
dc.date.issued 2009
dc.identifier.citation ARAMĂ, E., GHEORGHIŢĂ, E., PÎNTEA, V. Structura spectrelor de iradiere a politipului 2 4 ZnIn S la 80 K. In: Microelectronics and Computer Science: proc. 6th International Conference, 1-3 Oct. 2009, Chişinău, Republica Moldova, vol. 1, 2009, pp. 51-52. ISBN 978-9975-45-045-4. ISBN 978-9975-45-122-2 (vol. 1). en_US
dc.identifier.isbn 978-9975-45-045-4
dc.identifier.isbn 978-9975-45-122-2
dc.identifier.uri http://repository.utm.md/handle/5014/25717
dc.description.abstract In this article on the describe structure spectrum of radiation polities of 2 4 ZnIn S at 80 K relative thickness of plaque. Is proposed the optical transition energy for recombination holder with unbalanced load levels specifically determined experimentally (0,11 and 0,25 eV de la Ev). On the basis of the results are interpreted. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.relation.ispartof Proceeding of the 6th International Conference on "Microelectronics and Computer Science", oct.1-3, 2009, Chişinău, Moldova
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject monocrystals en_US
dc.subject semiconductors en_US
dc.subject optoelectronics elements en_US
dc.subject radiation polities en_US
dc.subject sensors en_US
dc.title Structura spectrelor de iradiere a politipului 2 4 ZnIn S la 80 K en_US
dc.type Article en_US


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