dc.contributor.author | CHAUDHRY, Amit | |
dc.contributor.author | ROY, J. N. | |
dc.date.accessioned | 2024-01-09T07:55:42Z | |
dc.date.available | 2024-01-09T07:55:42Z | |
dc.date.issued | 2009 | |
dc.identifier.citation | CHAUDHRY, Amit, ROY, J. N. Analytical modeling of energy quantization effects in MOSFETs. In: Microelectronics and Computer Science: proc. 6th International Conference, 1-3 Oct. 2009, Chişinău, Republica Moldova, vol. 1, 2009, pp. 107-110. ISBN 978-9975-45-045-4. ISBN 978-9975-45-122-2 (vol. 1). | en_US |
dc.identifier.isbn | 978-9975-45-045-4 | |
dc.identifier.isbn | 978-9975-45-122-2 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/25734 | |
dc.description.abstract | In this paper an analytical model has been developed to study the Energy Quantization Effects occurring in the MOSFETs (Metal Oxide Semiconductor Field Effect Oxide) under various conditions. These effects have resulted in a reduction in drain current and degradation of gate capacitance. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Technical University of Moldova | en_US |
dc.relation.ispartof | Proceeding of the 6th International Conference on "Microelectronics and Computer Science", oct.1-3, 2009, Chişinău, Moldova | |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | metal oxide semiconductor field effect oxide (MOSFET) | en_US |
dc.subject | energy quantization | en_US |
dc.subject | drain-induced barrier lowering (DIBL) | en_US |
dc.title | Analytical modeling of energy quantization effects in MOSFETs | en_US |
dc.type | Article | en_US |
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