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dc.contributor.author SHISHIYANU, Sergiu T.
dc.contributor.author GUEORGUIEV, Valentin K.
dc.contributor.author YILMAZ, Ercan
dc.contributor.author TURAN, Rasit
dc.contributor.author SHISHIYANU, Teodor S.
dc.date.accessioned 2024-01-09T08:33:48Z
dc.date.available 2024-01-09T08:33:48Z
dc.date.issued 2009
dc.identifier.citation SHISHIYANU, Sergiu T. et al. Effects of γ – irradiation on ZrO2 properties. In: Microelectronics and Computer Science: proc. 6th International Conference, 1-3 Oct. 2009, Chişinău, Republica Moldova, vol. 1, 2009, pp. 115-117. ISBN 978-9975-45-045-4. ISBN 978-9975-45-122-2 (vol. 1). en_US
dc.identifier.isbn 978-9975-45-045-4
dc.identifier.isbn 978-9975-45-122-2
dc.identifier.uri http://repository.utm.md/handle/5014/25736
dc.description.abstract The doses of γ –irradiation applied have been up to 80 Gray. The C-V characteristics seeing as the flat-band shift when exposed to γ – irradiation showed high sensitivity. Raman scattering measurements of the undoped ZrO2 thin films grown by RF magnetron sputtering on silicon substrate have been investigated. The impact of γ –irradiation doses on the ZrO2 thin films Raman spectra was analyzed. The intensity of the Raman signal originating from monoclinic ZrO2 is found to decrease with increasing gamma radiation. We also observed peak shift with the gamma radiation dose. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.relation.ispartof Proceeding of the 6th International Conference on "Microelectronics and Computer Science", oct.1-3, 2009, Chişinău, Moldova
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject zirconium dioxide thin films en_US
dc.subject gamma rays en_US
dc.subject Raman spectra en_US
dc.title Effects of γ – irradiation on ZrO2 properties en_US
dc.type Article en_US


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