dc.contributor.author | SHISHIYANU, Sergiu T. | |
dc.contributor.author | GUEORGUIEV, Valentin K. | |
dc.contributor.author | YILMAZ, Ercan | |
dc.contributor.author | TURAN, Rasit | |
dc.contributor.author | SHISHIYANU, Teodor S. | |
dc.date.accessioned | 2024-01-09T08:33:48Z | |
dc.date.available | 2024-01-09T08:33:48Z | |
dc.date.issued | 2009 | |
dc.identifier.citation | SHISHIYANU, Sergiu T. et al. Effects of γ – irradiation on ZrO2 properties. In: Microelectronics and Computer Science: proc. 6th International Conference, 1-3 Oct. 2009, Chişinău, Republica Moldova, vol. 1, 2009, pp. 115-117. ISBN 978-9975-45-045-4. ISBN 978-9975-45-122-2 (vol. 1). | en_US |
dc.identifier.isbn | 978-9975-45-045-4 | |
dc.identifier.isbn | 978-9975-45-122-2 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/25736 | |
dc.description.abstract | The doses of γ –irradiation applied have been up to 80 Gray. The C-V characteristics seeing as the flat-band shift when exposed to γ – irradiation showed high sensitivity. Raman scattering measurements of the undoped ZrO2 thin films grown by RF magnetron sputtering on silicon substrate have been investigated. The impact of γ –irradiation doses on the ZrO2 thin films Raman spectra was analyzed. The intensity of the Raman signal originating from monoclinic ZrO2 is found to decrease with increasing gamma radiation. We also observed peak shift with the gamma radiation dose. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Technical University of Moldova | en_US |
dc.relation.ispartof | Proceeding of the 6th International Conference on "Microelectronics and Computer Science", oct.1-3, 2009, Chişinău, Moldova | |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | zirconium dioxide thin films | en_US |
dc.subject | gamma rays | en_US |
dc.subject | Raman spectra | en_US |
dc.title | Effects of γ – irradiation on ZrO2 properties | en_US |
dc.type | Article | en_US |
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