Blue InGaN lasers under generation of picosecond pulses

Abstract

We report in this paper the numerical results of theoretical investigations of gene-

ration of picosecond pulses by blue InGaN with saturable absorber (SA). Using the single mode rate equations, we study the influence of different geometrical and

material parameters on the characteristics of output pulses. We discuss also the applications of pulses. Figure 1 shows an analytical model of investigated setup. The system consists of an InGaN active section and a SA added in longitudinal direction. The active layer is composed by three QWs, and the emitting wavelength is 405 nm. Two adimensional injected currents J1 and J2 are applied respectively to active section and to SA.