Photoluminiscence and absorption of emission by phonons of indirect transitions in layered GaS single crystals

Abstract

Absorption in E||b and E⊥c polarizations and photoluminescence at the absorption edge were studied at temperatures range 10–300 K. It was found that the smallest indirect transitions take place from the minimum of conduction band C1 (point M) to the maximum of valence band V1 in the Brillouin zone center (point Γ or nearby). A distance between these extrema is 2.4484 eV at 10 K. In addition, the magnitude of indirect transitions from the second band C2 (point M) to valence band V1 (Brillouin zone center) is 2.4912 eV at 10 K. The splitting of C1–C2 bands in M point of the Brillouin zone is equal to ∼43 meV. The indirect transitions from third conduction band C3 (point K) to valence band V1 in the nearby of Γ point are equal to 2.7683 eV at 10 K. The splitting of conduction bands C2 (point M) and C3 (point K) is higher than one for the splitting C1–C2. It was observed bands associated with self-absorption of photoluminescence emission by phonons with symmetries E1g1+A1g2, A1g2+A1g1 and A1g2+E2g2 involved in indirect transitions.