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Luminescenţa compuşilor ternari sub influenţa electronilor acceleraţi şi razelor X

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dc.contributor.author MACIUGA, A.
dc.contributor.author RADU, R.
dc.contributor.author PÎNTEA, V.
dc.contributor.author STRATAN, I.
dc.contributor.author NISTIRIUC, I.
dc.date.accessioned 2019-09-11T09:21:01Z
dc.date.available 2019-09-11T09:21:01Z
dc.date.issued 2006
dc.identifier.citation MACIUGA, A., RADU, R., PÎNTEA, V. et al. Luminescenţa compuşilor ternari sub influenţa electronilor acceleraţi şi razelor X. In: Meridian Ingineresc. 2006, nr. 3, pp. 45-47. ISSN 1683-853X. en_US
dc.identifier.issn 1683-853X
dc.identifier.uri http://repository.utm.md/handle/5014/4411
dc.description.abstract Se descrie tehnologia de creştere a semiconductorilor tripli de tipul АIIB2IIIC4IV, în special CdGa2S4 şi instalaţia de cercetări asupra proprietăţilor luminescente sub acţiunea electronilor acceleraţi şi razelor X. Este expusă metodica de prelucrare a spectrelor experimentale. Se face analiza comparativă a benzilor de catodoluminescenţă în relaţie cu modul şi condiţiile de excitare. S-a făcut o analiză complexă a proprietăţilor catodoluminescente a tiogalatului de cadmiu în intervalul de energii 1,0 : 3,8 eV. en_US
dc.description.abstract This article focuses on the description of triple semiconductors of АIIB2IIIC4IV type, especially CdGa2S4, and the research installation over luminescent properties under the action of accelerated electrons and X rays. The method of processing the experimental spectra is exposed as well as the comparative analysis of cathodoluminescence belts being in with excitation way and conditions for the first time a complex analysis was made regarding the cathodoluminescent properties of within the energy interval l1,0 : 3,8 eV. en
dc.description.abstract On décrit la technologie de la croissance des semi-conducteurs triples des type АIIB2IIIC4IV,en particulièrement CdGa2S4, et l’installation des recherches concernent les propriétés luminescentes sur l’action des électrons accélérés et des rayons X. Il est exposé la méthodique des spectres expérimentales. On fait l’analyse comparative des bandes catodoluminescence en fonction des méthodes d’excitation. On a fait une analyse complexe des propriétés catodoluminescente dans l’intervalle des énergies 1,0 : 3,8 eV. fr
dc.description.abstract Описывается технология выращивания тройных полупроводников типа АIIB2IIIC4IV, в частности для соединения CdGa2S4 (тиогаллат кадмия), и установка для исследования люминесцентных свойств при возбуждении ускоренными электронами и Х - лучами. Представлено методика обработки экспериментальных данных. Делается анализ спектров катодолюминесценции тиогаллата кадмия в широком интервале энергий 1,0 : 3,8 eV на основе, которого строится схема энергетических уровней в зоне запрещенных энергий. ru
dc.language.iso ro en_US
dc.publisher Editura U.T.M. en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject triple semiconductors en_US
dc.subject luminescence en_US
dc.subject semiconductors en_US
dc.subject X-rays en_US
dc.subject accelerated electrons en_US
dc.subject cathodoluminescence bands en_US
dc.subject cadmium thiogalate en_US
dc.subject semiconductori tripli en_US
dc.subject luminescenţă en_US
dc.subject raze X en_US
dc.subject electroni acceleraţi en_US
dc.subject benzi de catodoluminescenţă en_US
dc.subject tiogalat de cadmiu en_US
dc.title Luminescenţa compuşilor ternari sub influenţa electronilor acceleraţi şi razelor X en_US
dc.title.alternative Luminescent properties under the action of accelerated electrons and X rays en_US
dc.title.alternative Luminescent proprietes semiconducteurs triples sur l’action des electrons accelerés et des rayons X en_US
dc.title.alternative Люминесценция соединений типа АIIB2IIIC4IV под влиянием ускоренных электронов и Х – лучей en_US
dc.type Article en_US


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