Large Oscillator Strength Excitons in PbGa2S4 Crystals

PARVAN, V.; MIROVSCII, V.; MASNIC, A.

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dc.contributor.author	PARVAN, V.
dc.contributor.author	MIROVSCII, V.
dc.contributor.author	MASNIC, A.
dc.date.accessioned	2019-10-15T08:30:23Z
dc.date.available	2019-10-15T08:30:23Z
dc.date.issued	2011
dc.identifier.citation	PARVAN, V., MIROVSCII, V., MASNIC, A. Large OscillatorStrength Excitons in PbGa2S4Crystals. In: ICNBME-2011. International conference on Nanotechnologies and Biomedical Engineering. German-moldovan workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications: proc. of the intern. conf., July 7-8, 2011. Chişinău, 2011, pp. 114-116. ISBN 978-9975-66-239-0.	en_US
dc.identifier.isbn	978-9975-66-239-0
dc.identifier.uri	http://repository.utm.md/handle/5014/4680
dc.description.abstract	In PbGa2S4 crystals the exciton states with the energy of about 290 meV and high oscillator strength (longitudinal – transversal dissipation of 75 meV) were observed. The ground states of the excitons are not dissociated at the room temperature. At the temperature of 77 K and 8.6 K the ground (n=1) and excited (n=2,3) states of two excitons series A and B are observed. The Bor radius for A excitons is about 70 Å and for B excitons is about 10Å.	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	excitons	en_US
dc.subject	Bor radius for excitons	en_US
dc.subject	excitons with large binding energy	en_US
dc.subject	excitons with oscillator strength	en_US
dc.title	Large Oscillator Strength Excitons in PbGa2S4 Crystals	en_US
dc.type	Article	en_US