dc.contributor.author | KAPON, Eli | |
dc.contributor.author | MEREUŢA, Alexandru | |
dc.contributor.author | DOROGAN, Andrei | |
dc.contributor.author | DRAGUTAN, Nicolae | |
dc.contributor.author | VIERU, Tatiana | |
dc.contributor.author | SYRBU, Nicolae | |
dc.contributor.author | ZALAMAI, Victor | |
dc.date.accessioned | 2019-10-15T08:57:12Z | |
dc.date.available | 2019-10-15T08:57:12Z | |
dc.date.issued | 2011 | |
dc.identifier.citation | KAPON, Eli, MEREUŢA, Alexandru, DOROGAN, Andrei et al. Interband Optical Transitions in the Region of Excitonic Resonance in In0.3Ga0.7As/GaAs Quantum Wells. In: ICNBME-2011. International conference on Nanotechnologies and Biomedical Engineering. German-moldovan workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications: proc. of the intern. conf., July 7-8, 2011. Chişinău, 2011, pp. 142-144. ISBN 978-9975-66-239-0. | en_US |
dc.identifier.isbn | 978-9975-66-239-0 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/4682 | |
dc.description.abstract | Reflection spectra of In0.3Ga0.7As layers with 8nm thickness with quantum wells limited by GaAs barrier layer with 100nm thickness (bottom) and 9nm (upper) had been measured at S and P polarizations in the interval of photon energies 0.6 – 1.6eV at an incident angle near the normal one (4.5о) and Brewster angle (76 о). Thin absorption lines 0.9021eV, 1.0161eV, 1.1302eV, 1.1973eV, 1.2766eV conditioned by the transitions hh1-e1(1s), lh1-e1(1s), hh2-e2(1s), lh2e-2(1s), hh3-3(1s) and lh3-3e(1s) had been revealed. The intensity of absorption lines changes in the limits 10 – 70%. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Technical University of Moldova | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | quantum wells | en_US |
dc.subject | optical transitions | en_US |
dc.subject | excitons | en_US |
dc.subject | resonance | en_US |
dc.title | Interband Optical Transitions in the Region of Excitonic Resonance in In0.3Ga0.7As/GaAs Quantum Wells | en_US |
dc.type | Article | en_US |
The following license files are associated with this item: