Improvement of SiO2(Ge)SiO2/Si Nanostructures by Low Dose γ-radiation

Abstract

Effect of γ – radiation on SiO2(Ge)SiO2/Si nanostructures structural defects was investigated by C-V measurements characterization. The obtained results demonstrated that by low dose γ-radiation (0.1Gy*150Gy) have been essentially reduced the negative charge defects in the nanocomposite structures SiO2(Ge)SiO2/Si. At higher doses (350Gy*4000Gy) the concentration of positive charge defects slowly increased and C-V characteristics moved to the position of the C-V characteristics of pure SiO2 (without nc-Ge) having the same curves configuration. At the average doses (200Gy*350Gy) the concentration of negative charge defects and positive charge defects were approximately equal and the radiation stability of samples was the highest.