Crystalline structure, photoluminescence and optical absorption of ß - Ga2S3 crystals

dc.contributor.author	CARAMAN, Iuliana
dc.contributor.author	EVTODIEV, Ig.
dc.contributor.author	PALACHI, L.
dc.contributor.author	NEDEFF, V.
dc.contributor.author	LEONTIE, L
dc.contributor.author	RACOVEŢ, Oxana
dc.contributor.author	UNTILA, D.
dc.contributor.author	VATAVU, Elmira
dc.date.accessioned	2019-10-24T11:18:30Z
dc.date.available	2019-10-24T11:18:30Z
dc.date.issued	2013
dc.identifier.isbn	978-9975-62-343-8
dc.identifier.uri	http://repository.utm.md/handle/5014/5208
dc.description.abstract	Crystalline structure, photoluminescence and optical absorption of Ga2S3 in form of monocrystalline layers at 78K and 293K were investigated. A indirect optical bandgap of 2,94 eV and 3,078 eV was found for monocrystalline samples, and of 3,149 eV and 3,393 eV for direct optical band gap, at 293K and 78K, respectively. The photoluminescence spectrum of monocrystalline layers at 78K consists of three main bands peaked at 2,04 eV, 1,84 eV and 1,66 eV. Structural native defects create deep recombination and electron capture levels within the Ga2S3 band gap.	en_US
dc.language.iso	en	en_US
dc.publisher	Tehnica UTM	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	layered semiconductors	en_US
dc.subject	semiconductors	en_US
dc.subject	photoluminescence	en_US
dc.title	Crystalline structure, photoluminescence and optical absorption of ß - Ga2S3 crystals	en_US
dc.type	Article	en_US