dc.contributor.author | NIKOLAEVA, Albina | |
dc.contributor.author | KONOPKO, Leonid | |
dc.contributor.author | ROGACKI, Krziysztof | |
dc.contributor.author | GHERGHISHAN, Igori | |
dc.contributor.author | BOTNARI, Oxana | |
dc.contributor.author | KOROMYSLICHENKO, Tatiana | |
dc.date.accessioned | 2019-10-31T13:16:48Z | |
dc.date.available | 2019-10-31T13:16:48Z | |
dc.date.issued | 2019 | |
dc.identifier.citation | NIKOLAEVA, Albina, KONOPKO, Leonid, ROGACKI, Krziysztof, GHERGHISHAN, Igori, BOTNARI, Oxana, KOROMYSLICHENKO, Tatiana. Exfoliation and thermoelectric properties of bismuth telluride and bismuth chalcogenides layers N- and P- type. In: Electronics, Communications and Computing: extended abstracts of the 10th Intern. Conf.: the 55th anniversary of Technical University of Moldova, Chişinău, October 23-26, 2019. Chişinău, 2019, p.68. ISBN 978-9975-108-84-3. | en_US |
dc.identifier.isbn | 978-9975-108-84-3 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/5786 | |
dc.description | Abstract | en_US |
dc.description.abstract | Bismuth telluride and its alloys are the best thermoelectric material at room temperature. Bulk thermoelectric modules are used widely in industry as Peltier cooling devices and only bismuth telluride materials are commercially available for power generation. Last years the development of new concepts- topological insulators (TI) have been made, that predicted the enhancement thermoelectric efficiency ZT=2/ in TI [1]. In this presentation we describe a ”mechanical exfoliation” method of single crystal bismuth telluride layers with thickness 10-20 m n- and p- type [2]. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Tehnica UTM | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | topological insulators | en_US |
dc.subject | layers | en_US |
dc.subject | surface state | en_US |
dc.subject | thermoelectricity | en_US |
dc.title | Exfoliation and thermoelectric properties of bismuth telluride and bismuth chalcogenides layers N- and P- type | en_US |
dc.type | Article | en_US |
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