Abstract:
Currently, Ge2Sb2Te5 (GST225) is widely investigated as material for non-volatile phase
change memory. However, for the successful implementation of the multi-layered memory cell, it
is necessary to understand peculiarities of interaction between GST225 and adjacent layers. In
this regard, in the present work the contact resistances of the different contact pads to the GST225
thin films and mechanical properties of the GST225 films on the different sublayers were
investigated.