Chalcogenide materials for emerging memories

Abstract

Emerging resistive switching (RS) non-volatile memory (NVM) technologies, such as resistive random access memory (RRAM) or phase change memory (PCM), are promising candidates for the next generation of advanced data storage applications. They have a number of advantages, such as scalability, non-volatility, high switching speed, energy efficiency and ease of fabrication, that could overcome the limitations of current memory technologies.