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dc.contributor.author VELEA, A.
dc.date.accessioned 2019-11-05T12:34:13Z
dc.date.available 2019-11-05T12:34:13Z
dc.date.issued 2019
dc.identifier.citation VELEA, A. Chalcogenide materials for emerging memories. In: Amorphous and Nanostructured Chalcogenides. Abstract Book: proc. of the 9th International Conference, 30 June - 4 July, 2019. Chişinău, 2019, pp. 5-6. en_US
dc.identifier.uri http://repository.utm.md/handle/5014/6106
dc.description Abstract en_US
dc.description.abstract Emerging resistive switching (RS) non-volatile memory (NVM) technologies, such as resistive random access memory (RRAM) or phase change memory (PCM), are promising candidates for the next generation of advanced data storage applications. They have a number of advantages, such as scalability, non-volatility, high switching speed, energy efficiency and ease of fabrication, that could overcome the limitations of current memory technologies. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject resistive switching en_US
dc.subject non-volatile memory en_US
dc.subject resistive random access memory en_US
dc.subject phase change memory en_US
dc.subject chalcogenide materials en_US
dc.subject data storage applications en_US
dc.title Chalcogenide materials for emerging memories en_US
dc.type Article en_US


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