dc.contributor.author | VELEA, A. | |
dc.date.accessioned | 2019-11-05T12:34:13Z | |
dc.date.available | 2019-11-05T12:34:13Z | |
dc.date.issued | 2019 | |
dc.identifier.citation | VELEA, A. Chalcogenide materials for emerging memories. In: Amorphous and Nanostructured Chalcogenides. Abstract Book: proc. of the 9th International Conference, 30 June - 4 July, 2019. Chişinău, 2019, pp. 5-6. | en_US |
dc.identifier.uri | http://repository.utm.md/handle/5014/6106 | |
dc.description | Abstract | en_US |
dc.description.abstract | Emerging resistive switching (RS) non-volatile memory (NVM) technologies, such as resistive random access memory (RRAM) or phase change memory (PCM), are promising candidates for the next generation of advanced data storage applications. They have a number of advantages, such as scalability, non-volatility, high switching speed, energy efficiency and ease of fabrication, that could overcome the limitations of current memory technologies. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Tehnica UTM | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | resistive switching | en_US |
dc.subject | non-volatile memory | en_US |
dc.subject | resistive random access memory | en_US |
dc.subject | phase change memory | en_US |
dc.subject | chalcogenide materials | en_US |
dc.subject | data storage applications | en_US |
dc.title | Chalcogenide materials for emerging memories | en_US |
dc.type | Article | en_US |
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