Осцилляции Шубникова-де Газа в монокристаллах Pb0,82Sn0,18Te

МЕГЛЕЙ, Д.; АЛЕКСЕЕВА, С.

Home
→
Facultatea Electronică şi Telecomunicaţii
→
Conferinţa Internaţională "Telecomunicaţii, Electronică şi Informatică" - ICTEI
→
2012
→
View Item

dc.contributor.author	МЕГЛЕЙ, Д.
dc.contributor.author	АЛЕКСЕЕВА, С.
dc.date.accessioned	2019-12-06T11:49:10Z
dc.date.available	2019-12-06T11:49:10Z
dc.date.issued	2012
dc.identifier.citation	МЕГЛЕЙ, Д., АЛЕКСЕЕВА, С. Осцилляции Шубникова-де Газа в монокристаллах Pb0,82Sn0,18Te. In: Telecommunications, Electronics and Informatics - ICTEI 2012: proc. of the 5th intern. conf., Technical University of Moldova, May 11-13, 2012. Chișinău, 2012, Vol. 1, pp. 321-325. ISBN 978-9975-45-082-9.	en_US
dc.identifier.isbn	978-9975-45-082-9
dc.identifier.uri	http://repository.utm.md/handle/5014/7332
dc.description.abstract	Single crystals of lead-tin telluride have been prepared by gas-phase synthesis. Shubnikov-de Haas effects in magnetic fields up to 12 T at low temperatures of 2.1 and 4.2 K have been studied. The parameters of the charge carrier energy spectrum have been determined. It has been found that an increase in the charge carrier concentration leads to an increase in the cyclotron effective mass, Fermi surface cross section, and relaxation time.	en_US
dc.language.iso	ru	en_US
dc.publisher	Technical University of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	Fermi surfaces cross section	en_US
dc.subject	Shubnikov-de Haas effects	en_US
dc.subject	магнитосопротивление	en_US
dc.subject	циклотронная масса	en_US
dc.subject	сечение поверхности Ферми	en_US
dc.subject	осцилляции Шубникова де Газа	en_US
dc.title	Осцилляции Шубникова-де Газа в монокристаллах Pb0,82Sn0,18Te	en_US
dc.type	Article	en_US