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Perspectives of Bulk and Nanosized II-VI Compounds for Light-emission Application

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dc.contributor.author RADEVICI, I.
dc.contributor.author SUSHKEVICH, K.
dc.contributor.author COLIBABA, G.
dc.contributor.author HUHTINEN, H.
dc.contributor.author NEDEOGLO, D.
dc.contributor.author PATURI, O.
dc.date.accessioned 2020-05-14T10:12:48Z
dc.date.available 2020-05-14T10:12:48Z
dc.date.issued 2015
dc.identifier.citation RADEVICI, I., SUSHKEVICH, K., COLIBABA, G. et al. Perspectives of Bulk and Nanosized II-VI Compounds for Light-emission Application. In: ICNMBE: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 3rd intern. conf., Sept. 23-26 : Program & Abstract Book , 2015. Chişinău, 2015, p. 69. en_US
dc.identifier.uri https://doi.org/10.1007/978-981-287-736-9_34
dc.identifier.uri http://repository.utm.md/handle/5014/8190
dc.description Access full text - https://doi.org/10.1007/978-981-287-736-9_34 en_US
dc.description.abstract Activation of II-VI semiconductors with transition metals (Cr) and rare-earths elements (Yb) results in interaction of the doping ions with the native defects (e.g., zinc vacancies). This interaction has the most significant influence on formation of emission properties of the wide bandgap semiconductors. Effects of defect-impurity interaction on emission spectra of bulk ZnSe:Cr and ZnSe:Yb crystals are shown. Possibility to use nanosized materials to control this interaction is discussed. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject semiconductors en_US
dc.subject transition metals en_US
dc.subject metals en_US
dc.subject rareearths elements en_US
dc.subject emissions en_US
dc.title Perspectives of Bulk and Nanosized II-VI Compounds for Light-emission Application en_US
dc.type Article en_US


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