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Detection in the Contacts with HTSC - InSb: Numerical Modeling of the Contact Area Role
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| dc.contributor.author | KERNER, Ia.I. | |
| dc.date.accessioned | 2020-05-14T10:20:24Z | |
| dc.date.available | 2020-05-14T10:20:24Z | |
| dc.date.issued | 2015 | |
| dc.identifier.citation | KERNER, Ia.I. Detection in the Contacts with HTSC - InSb: Numerical Modeling of the Contact Area Role. In: ICNMBE: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 3rd intern. conf., Sept. 23-26 : Program & Abstract Book , 2015. Chişinău, 2015, p. 70. | en_US |
| dc.identifier.uri | https://doi.org/10.1007/978-981-287-736-9_9 | |
| dc.identifier.uri | http://repository.utm.md/handle/5014/8191 | |
| dc.description | Access full text - https://doi.org/10.1007/978-981-287-736-9_9 | en_US |
| dc.description.abstract | Diode detectors (DD) are widely used in electronic information and communication systems. The numerical modeling of the electrical properties in the contacts of the high temperature superconductor (HTSC) with semiconductor indium antimonite (InSb) had been made. There were analyzed the possibilities to create DD based on these contacts and working at liquid nitrogen temperature 77.4 K. The influence of the contact area on the DD parameters was analyzed. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Tehnica UTM | en_US |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
| dc.subject | diode detectors | en_US |
| dc.subject | semiconductors | en_US |
| dc.subject | superconductors | en_US |
| dc.title | Detection in the Contacts with HTSC - InSb: Numerical Modeling of the Contact Area Role | en_US |
| dc.type | Article | en_US |
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