Excitonic Crystal in Nanotechnology

dc.contributor.author	PYSHKIN, S.
dc.date.accessioned	2020-05-14T12:21:30Z
dc.date.available	2020-05-14T12:21:30Z
dc.date.issued	2015
dc.identifier.citation	PYSHKIN, S. Excitonic Crystal in Nanotechnology. In: ICNMBE: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 3rd intern. conf., Sept. 23-26 : Program & Abstract Book , 2015. Chişinău, 2015, p. 73.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/8196
dc.description	Abstract	en_US
dc.description.abstract	This paper demonstrates the results of development of growth technology for perfect and free of contamination gallium phosphide (GaP) crystals and investigation of influence of crystallization conditions on quality and properties of the crystals. The long-term ordered and therefore close to ideal crystals repeat behavior of the best nanoparticles with pronounced quantum confinement effect. These perfect crystals are useful for application in top-quality optoelectronic devices as well as they are a new object for development of fundamentals of solid state physics.	en_US
dc.language.iso	en	en_US
dc.publisher	Tehnica UTM	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	gallium phosphide crystals	en_US
dc.subject	crystals	en_US
dc.subject	nanoparticles	en_US
dc.subject	optoelectronic devices	en_US
dc.title	Excitonic Crystal in Nanotechnology	en_US
dc.type	Article	en_US