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Optical Properties and the Stability at Radiation for Monocrystals ZnIn2S4
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| dc.contributor.author | ARAMA, E. | |
| dc.contributor.author | GHEORGHIŢA, E. | |
| dc.contributor.author | PÎNTEA, V. | |
| dc.contributor.author | MACIUGA, A. | |
| dc.contributor.author | GUBCEAC, N. | |
| dc.date.accessioned | 2020-05-15T10:36:40Z | |
| dc.date.available | 2020-05-15T10:36:40Z | |
| dc.date.issued | 2015 | |
| dc.identifier.citation | ARAMA, E., GHEORGHIŢA, E., PÎNTEA, V. Optical Properties and the Stability at Radiation for Monocrystals ZnIn2S4. In: ICNMBE: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 3rd intern. conf., Sept. 23-26 : Program & Abstract Book , 2015. Chişinău, 2015, p. 81. | en_US |
| dc.identifier.uri | http://repository.utm.md/handle/5014/8217 | |
| dc.description | Abstract | en_US |
| dc.description.abstract | This study presents the results of investigations on the conductivity and irradiation stability of single crystals ZnIn2S4 in a wide range of incident electron energies ( 30 75 keV ) and the respective doses (1014 1020 cm 2 ). It considers the possibilities to manufacture accelerated electron detectors and assesses their parameters. Considering that the energy values of the order102 keV are near the threshold of structural defects of intensive formation, the influence of this phenomenon on the detector parameters is subject to the analysis. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Tehnica UTM | en_US |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
| dc.subject | conductivity | en_US |
| dc.subject | irradiation stability | en_US |
| dc.subject | single crystals | en_US |
| dc.subject | crystals | en_US |
| dc.title | Optical Properties and the Stability at Radiation for Monocrystals ZnIn2S4 | en_US |
| dc.type | Article | en_US |
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