Recent Progress in GaN-based Devices for Terahertz Technology

Abstract

This paper reviews the crystal growth, basic properties, and principle of operation of III-nitride based terahertz devices. We provide a brief history and current status of crystal growth of polar and non-polar GaN-based heterostructures and its properties. The role of spontaneous and piezoelectric polarization in polar III-nitride structures and its impact on performance of terahertz devices is discussed in detail. We show that GaN-based semiconductor compounds are promising materials for fabrication terahertz sources operating up to room temperature due to their unique properties such as large bandgap and conduction band offset (CBO) energy, high LO-phonon energy, and high resistant to the high breakdown electric field.