IRTUM – Institutional Repository of the Technical University of Moldova

Radiative Recombination of Bound Excitons in MoSe2:I2 Layered Crystals

Show simple item record

dc.contributor.author SIMINEL, M.
dc.contributor.author NEDELEA, V.
dc.contributor.author SUSHKEVICH, K.
dc.contributor.author SIMINEL, A.
dc.contributor.author MICU, A.
dc.contributor.author KULYUK, L.
dc.date.accessioned 2020-05-28T19:24:28Z
dc.date.available 2020-05-28T19:24:28Z
dc.date.issued 2019
dc.identifier.citation SIMINEL, M., NEDELEA, V., SUSHKEVICH, K. et al. Radiative Recombination of Bound Excitons in MoSe2:I2 Layered Crystals. In: ICNMBE-2019: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 4rd intern. conf., Sept. 18-21, 2019: Program and Abstract Book. Chişinău, 2019, p. 83. ISBN 978-9975-72-392-3. en_US
dc.identifier.isbn 978-9975-72-392-3
dc.identifier.uri http://repository.utm.md/handle/5014/8442
dc.identifier.uri https://doi.org/10.1007/978-3-030-31866-6_55
dc.description Access full text - https://doi.org/10.1007/978-3-030-31866-6_55 en_US
dc.description.abstract The steady-state and time-resolved photoluminescence (PL) of excitons bound on intercalated iodine molecules was studied for the first time in MoSe2:I2 layered single crystals. Along with narrow exciton spectral lines located near the energy of the MoSe2 indirect bandgap in the region of 0.98–1.06 eV, an IR broadband radiation centered at 0.78 eV and caused by the recombination of photoexcited carriers through the intrinsic lattice defects were found. To describe the temperature dependences of the intensity of steady-state PL, as well as its temporal characteristics, a kinetic model was proposed that takes into account the radiative and non-radiative recombination channels present in this quasi-two-dimensional semiconductor. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject transition metal dichalcogenides en_US
dc.subject molybdenum diselenide en_US
dc.subject layered crystals en_US
dc.subject photoluminescence en_US
dc.subject bound excitons en_US
dc.title Radiative Recombination of Bound Excitons in MoSe2:I2 Layered Crystals en_US
dc.type Article en_US


Files in this item

The following license files are associated with this item:

This item appears in the following Collection(s)

Show simple item record

Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

Search DSpace


Browse

My Account