dc.contributor.author | SPRINCEAN, V. | |
dc.contributor.author | VATAVU, E. | |
dc.contributor.author | DMITROGLO, L. | |
dc.contributor.author | UNTILA, D. | |
dc.contributor.author | CARAMAN, I. | |
dc.contributor.author | CARAMAN, M. | |
dc.date.accessioned | 2020-05-28T21:25:06Z | |
dc.date.available | 2020-05-28T21:25:06Z | |
dc.date.issued | 2019 | |
dc.identifier.citation | SPRINCEAN, V., VATAVU, E., DMITROGLO, L. et al. The Structure and Chemical Composition of Ga2O3 Oxide Prepared by Annealing of Ga2Se3 Crystals. In: ICNMBE-2019: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 4rd intern. conf., Sept. 18-21, 2019: Program and Abstract Book. Chişinău, 2019, p. 85. ISBN 978-9975-72-392-3. | en_US |
dc.identifier.isbn | 978-9975-72-392-3 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/8446 | |
dc.identifier.uri | https://doi.org/10.1007/978-3-030-31866-6_42 | |
dc.description | Access full text - https://doi.org/10.1007/978-3-030-31866-6_42 | en_US |
dc.description.abstract | The chemical composition and structure of Ga2O3 obtained by thermal treatment (TT) in air of β-Ga2Se3 crystals were studied using the X-ray diffraction (XRD) method, Raman spectroscopy, EDX, and SEM. The surface of the Ga2Se3 crystal air annealed at 770 K is covered by β-Ga2O3 layer of microcrystallites and as well as by β-Ga2Se3 crystallites. The oxygen is non-homogeniously distributed on the surface of the 770 K annealed sample. The sample obtained by TT at 1150 K consists of nanolamella, nanotowers, and nanobars of β-Ga2O3, their size being estimated to 10-200 nm. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Tehnica UTM | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | crystallites | en_US |
dc.subject | microcrystallites | en_US |
dc.subject | X-ray diffraction | en_US |
dc.subject | Raman spectroscopy | en_US |
dc.title | The Structure and Chemical Composition of Ga2O3 Oxide Prepared by Annealing of Ga2Se3 Crystals | en_US |
dc.type | Article | en_US |
The following license files are associated with this item: