Luminescence of β-Ga2O3 Nanoforms Obtained by Oxidation of GaSe Doped with Eu

SPRINCEAN, V.; UNTILA, D.; CHIRITA, A.; EVTODIEV, I.; CARAMAN, I.

Home
→
Facultatea Calculatoare, Informatică şi Microelectronică
→
Conferinţe
→
Conferinţa ICNBME - International Conference on Nanotechnologies and Biomedical Engineering
→
2019
→
View Item

Luminescence of β-Ga2O3 Nanoforms Obtained by Oxidation of GaSe Doped with Eu

SPRINCEAN, V.; UNTILA, D.; CHIRITA, A.; EVTODIEV, I.; CARAMAN, I.

URI: http://repository.utm.md/handle/5014/8468
https://doi.org/10.1007/978-3-030-31866-6_49

Date: 2019

Abstract:

The GaSe single crystals were doped with Eu in the process of their synthesis and growth. The oxide of β-Ga2O3 doped with Eu in the form of massive nanowires was obtained by thermal treatment (TT) in the atmosphere of GaSe single crystals doped with 1.0 and 3.0 at.% of Eu. The crystalline structure, surface morphology and photoluminescence spectra of GaSe:Eu and β-Ga2O3:Eu single crystals were studied. The Photoluminescence (FL) spectrum of GaSe doped with 1.0 at.% of Eu at room temperature is formed as a result of transitions of 5D0 →7F1 to Eu3+ ion and as a result of radiation annihilation of n = 1 excitons in GaSe. The FL spectra of Ga2O3:Eu was interpreted on the basis of the energy level diagram of electrons in Eu3+ ion.