dc.contributor.author | RAEVSCHI, S. | |
dc.contributor.author | GORCEAC, L. | |
dc.contributor.author | BOTNARIUC, V. | |
dc.contributor.author | BRANISTE, T. | |
dc.date.accessioned | 2020-05-30T17:14:40Z | |
dc.date.available | 2020-05-30T17:14:40Z | |
dc.date.issued | 2019 | |
dc.identifier.citation | RAEVSCHI, S., GORCEAC, L., BOTNARIUC, V., BRANISTE, T. Growth of p-GaN on Silicon Substrates with ZnO Buffer Layers. In: ICNMBE-2019: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 4rd intern. conf., Sept. 18-21, 2019: Program and Abstract Book. Chişinău, 2019, p. 89. ISBN 978-9975-72-392-3. | en_US |
dc.identifier.isbn | 978-9975-72-392-3 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/8490 | |
dc.identifier.uri | https://doi.org/10.1007/978-3-030-31866-6_19 | |
dc.description | Access full text - https://doi.org/10.1007/978-3-030-31866-6_19 | en_US |
dc.description.abstract | GaN layers on Silicon with ZnO intermediate layer were synthesized by using the HVPE (Hydride Vapor Phase Epitaxy) method. ZnO layers were deposited from solutions of zinc compounds in ethanol or water in two steps. At the first step a ZnO nucleation layer was deposited from a solution of zinc acetate in ethanol, at the second step a ZnO precipitate was deposited from a solution of zinc nitrate and KOH in water by boiling. On the obtained structures the GaN nucleation layers were deposited at 500 ℃ for 15 min, then GaN layers were grown at 850–970 ℃ for 30 ± 5 min. Structures were studied by using the optical and SEM microscope and XRD method. The type of conductivity of the layers was determined by using the method of thermal electromotive force measurement (TEFM). | en_US |
dc.language.iso | en | en_US |
dc.publisher | Tehnica UTM | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | termal electromotive force | en_US |
dc.subject | Hydride Vapor Phase Epitaxy method | en_US |
dc.subject | electrical conductivity | en_US |
dc.title | Growth of p-GaN on Silicon Substrates with ZnO Buffer Layers | en_US |
dc.type | Article | en_US |
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