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Growth of p-GaN on Silicon Substrates with ZnO Buffer Layers

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dc.contributor.author RAEVSCHI, S.
dc.contributor.author GORCEAC, L.
dc.contributor.author BOTNARIUC, V.
dc.contributor.author BRANISTE, T.
dc.date.accessioned 2020-05-30T17:14:40Z
dc.date.available 2020-05-30T17:14:40Z
dc.date.issued 2019
dc.identifier.citation RAEVSCHI, S., GORCEAC, L., BOTNARIUC, V., BRANISTE, T. Growth of p-GaN on Silicon Substrates with ZnO Buffer Layers. In: ICNMBE-2019: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 4rd intern. conf., Sept. 18-21, 2019: Program and Abstract Book. Chişinău, 2019, p. 89. ISBN 978-9975-72-392-3. en_US
dc.identifier.isbn 978-9975-72-392-3
dc.identifier.uri http://repository.utm.md/handle/5014/8490
dc.identifier.uri https://doi.org/10.1007/978-3-030-31866-6_19
dc.description Access full text - https://doi.org/10.1007/978-3-030-31866-6_19 en_US
dc.description.abstract GaN layers on Silicon with ZnO intermediate layer were synthesized by using the HVPE (Hydride Vapor Phase Epitaxy) method. ZnO layers were deposited from solutions of zinc compounds in ethanol or water in two steps. At the first step a ZnO nucleation layer was deposited from a solution of zinc acetate in ethanol, at the second step a ZnO precipitate was deposited from a solution of zinc nitrate and KOH in water by boiling. On the obtained structures the GaN nucleation layers were deposited at 500 ℃ for 15 min, then GaN layers were grown at 850–970 ℃ for 30 ± 5 min. Structures were studied by using the optical and SEM microscope and XRD method. The type of conductivity of the layers was determined by using the method of thermal electromotive force measurement (TEFM). en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject termal electromotive force en_US
dc.subject Hydride Vapor Phase Epitaxy method en_US
dc.subject electrical conductivity en_US
dc.title Growth of p-GaN on Silicon Substrates with ZnO Buffer Layers en_US
dc.type Article en_US


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