dc.contributor.author | CIOBANU, V. | |
dc.date.accessioned | 2020-05-31T09:39:05Z | |
dc.date.available | 2020-05-31T09:39:05Z | |
dc.date.issued | 2019 | |
dc.identifier.citation | CIOBANU, V. GaN-based 2D and 3D Architectures for Electronic Applications. In: ICNMBE-2019: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 4rd intern. conf., Sept. 18-21, 2019: Program and Abstract Book. Chişinău, 2019, p. 92. ISBN 978-9975-72-392-3. | en_US |
dc.identifier.isbn | 978-9975-72-392-3 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/8499 | |
dc.identifier.uri | https://doi.org/10.1007/978-3-030-31866-6_41 | |
dc.description | Access full text - https://doi.org/10.1007/978-3-030-31866-6_41 | en_US |
dc.description.abstract | In this paper we demonstrate the fabrication of electronic devices based on GaN nanostructures. For fabrication of 2D and 3D GaN nanostructures, Surface Charge Lithography (SCL) and Hydride Vapor Phase Epitaxy (HVPE) techniques were used. A memristor device based on GaN ultrathin membranes with the thickness of 15 nm obtained by SCL was elaborated. For GaN microtetrapods growth, the HVPE method was used, where ZnO microtetrapods were used as sacrificial template. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Tehnica UTM | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | microtetrapods | en_US |
dc.subject | ultrathin membranes | en_US |
dc.subject | pressure sensors | en_US |
dc.subject | memristors | en_US |
dc.subject | artificial synapses | en_US |
dc.title | GaN-based 2D and 3D Architectures for Electronic Applications | en_US |
dc.type | Article | en_US |
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