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GaN-based 2D and 3D Architectures for Electronic Applications

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dc.contributor.author CIOBANU, V.
dc.date.accessioned 2020-05-31T09:39:05Z
dc.date.available 2020-05-31T09:39:05Z
dc.date.issued 2019
dc.identifier.citation CIOBANU, V. GaN-based 2D and 3D Architectures for Electronic Applications. In: ICNMBE-2019: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 4rd intern. conf., Sept. 18-21, 2019: Program and Abstract Book. Chişinău, 2019, p. 92. ISBN 978-9975-72-392-3. en_US
dc.identifier.isbn 978-9975-72-392-3
dc.identifier.uri http://repository.utm.md/handle/5014/8499
dc.identifier.uri https://doi.org/10.1007/978-3-030-31866-6_41
dc.description Access full text - https://doi.org/10.1007/978-3-030-31866-6_41 en_US
dc.description.abstract In this paper we demonstrate the fabrication of electronic devices based on GaN nanostructures. For fabrication of 2D and 3D GaN nanostructures, Surface Charge Lithography (SCL) and Hydride Vapor Phase Epitaxy (HVPE) techniques were used. A memristor device based on GaN ultrathin membranes with the thickness of 15 nm obtained by SCL was elaborated. For GaN microtetrapods growth, the HVPE method was used, where ZnO microtetrapods were used as sacrificial template. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject microtetrapods en_US
dc.subject ultrathin membranes en_US
dc.subject pressure sensors en_US
dc.subject memristors en_US
dc.subject artificial synapses en_US
dc.title GaN-based 2D and 3D Architectures for Electronic Applications en_US
dc.type Article en_US


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