Conductibility and irradiation stability of single crystals ZnIn2S4

Abstract

This study presents the results of investigations on the conductivity and irradiation stability of single crystals ZnIn2S4 in a wide range of incident electron energies (3075 keV) and respective doses (10141020 cm2). The possibilities of manufacturing accelerated electron detectors are explored, and their parameters are estimated. Considering that the energy values on the order of 102 keV are near the threshold of structural defects of intensive formation, the influence of this phenomenon on the detector parameters is subject to the analysis.