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Browsing by Author "BAKERENKOV, A. S."

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Evaluation of Radiation Hardness of the Bipolar Devices in the Space Conditions

RODIN, A. S.; BAKERENKOV, A. S.; FELITSYN, V. A.; PERSHENKOV, V. S.; TELETS, V. A. (Tehnica UTM, 2019)

Real time dependence of operation temperature, which is typical for space environment, was taken into account in the numerical simulation of radiation degradation of LM111 bipolar voltage comparator input current. The ...
Experimental Equipment for Extraction of ELDRS Conversion Model Parameters and its Application for Estimation of Radiation Effects in Bipolar Devices

BAKERENKOV, A. S. (Tehnica UTM, 2015)

Experimental equipment for extraction of ELDRS conversion model parameters was described. The equipment involves measure device with three voltage sources, three current sensors, one voltmeter and two relay switch-boards. ...
Ionizing Radiation Dose Sensor Based on n-channel MOSFET

PODLEPETSKY, B. I.; PERSHENKOV, V. S.; BELYAKOV, V. V.; BAKERENKOV, A. S.; FELITSYN, V.; RODIN, A. S. (Tehnica UTM, 2019)

We investigated the radiation sensitivity of dose-metrical sensors based on n-channel MOSFETs taking into account the effects of temperature and electrical modes. There were measured the output voltages V being equal to ...
Numerical Estimation of the Radiation Hardness of Bipolar Integrated Circuits in Various Irradiation Conditions of Space Environment

BAKERENKOV, A. S.; PERSHENKOV, V. S.; RODIN, A. S.; FELITSYN, V. A.; MIROSHNICHENKO, A. G. (Tehnica UTM, 2015)

The conversion model of low dose rate effect in bipolar devices was used for numerical simulation of total dose effects in bipolar devices for various radiation conditions of space environment. The numerical simulation was ...
“True” Dose Rate Effect of the ELDRS Conversion Model

PERSHENKOV, V. S.; BAKERENKOV, A. S.; TELETS, V. A.; BELYAKOV, V. V.; FELITSYN, V. A.; RODIN, A. S. (Tehnica UTM, 2019)

Modification of the ELDRS (Enhanced Low Dose Rate Sensitivity) conversion model is presented. The effect of the oxide trapped charge on the value of the oxide electric field and the yield of the oxide charge takes into ...

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