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Browsing by Subject "gallium arsenide"

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600 GHz GaAs Schottky diode mixer in split-block technology

SCHUR, J.; BIBER, S.; COJOCARI, O.; SCHMIDT, L.-P.; HARTNAGEL, H.-L. (IEEE, 2013)

In this paper we present measurement results of a micro-machined split-block waveguide mixer for 600 GHz. The mixer implements a planar GaAs Schottky diode on a quartz substrate. Two different diode designs used for this ...
Automatic Control Quality of the Alloying Process at the Epitaxial Semiconductor Structure Growth

BARANOV, Simion; FIODOROV, Ion; COJUHARI, Irina; IZVOREANU, Bartolomeu; GORCEAC, Leonid; GASHIN, Petru (University of Craiova, 2013)

The dynamic of automatic system control in conditions of absence of the operate measurement of exit parameter by utilizing a intermediary parameter as may be the control system of gallium arsenide epitaxial layers impurity ...
Automation control system of the alloying process of gallium arsenide layers growth by epitaxial technology

BARANOV, S.; COJUHARI, Irina; IZVOREANU, Bartolomeu; GORCEAC, L. (IEEE, 2012)

This paper proposes to control the thermal alloying process of GaAs epilayers growth by transport reaction in Ga-AsCI 3 -H 2 system. The thermal alloying process is controlled by using the universal two-channel programmable ...
Chemical Method for the Gallium Arsenide Rectification Structure Divide into Crystals

BARANOV, Simion; CINIC, Boris; DUDCA, Tudor; SUMAN, Victor (Technical University of Moldova, 2009)

Thise investigations are referred to power semiconductor devices (PSD) area manufactured by gallium arsenide (GaAs) advanced technology. The work’s objective is excluding the break-down effect on the p-n junction surface ...
Convolver on multileading-out acoustic-electronic cryotron

NISTIIUK, Pv.; TSURKAN, D. N.; ALEXEI, A. S.; BEREGOI, E. A.; BIRZOI, O. (IEEE, 2001)

The results of a convolver on tunable acoustic-electronic cryotron elaboration are presented. The performances and parameters of a convolver depend on the frequency surface acoustic waves (SAW), amount and configurations ...
Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

MONAICO, Elena I.; MONAICO, Eduard V.; URSAKI, Veaceslav V.; HONNALI, Shashank; POSTOLACHE, Vitalie; LEISTNER, Karin; NIELSCH, Kornelius; TIGINYANU, Ion M. (Beilstein Institute for the Advancement of Chemical Sciences, Germany, 2020)

A comparative study of the anodization processes occurring at the GaAs(111)A and GaAs(111)B surfaces exposed to electrochemical etching in neutral NaCl and acidic HNO3 aqueous electrolytes is performed in galvanostatic and ...
Evolution of Pore Growth in GaAs in Transitory Anodization Regime from One Applied Voltage to Another

MONAICO, E. I.; MONAICO, E. V.; URSAKI, V. V.; TIGINYANU, I. M. (Springer Nature Switzerland, 2021)

The paper reports the results of investigation of the pore growth during anodic etching of (111)-oriented wafers of Si-doped n-GaAs in an environmentally friendly NaCl based electrolyte, with switching the applied voltage ...
Fabrication of diameter modulated gallium arsenide nanowires via anodization

MONAICO, E. I. (Белорусский Государственный Университет, 2022)

In this paper, the technological approach for diameter modulated GaAs nanowires fabrication via electrochemical etching representing simple and cost-effective technology is demonstrated. At optimized applied potential, in ...
Proprietăţile electrice ale celulei fotovoltaice cu joncţiune reliefată fabricată prin HVPE

BARANOV, Simion; GORCEAC, Leonid; CINIC, Boris (Tehnica UTM, 2014)

In this report we are represented the electro-physical properties of the photovoltaic cell with single relief junction fabricated on gallium arsenide substrate by HVPE method. This cell have the shunt resistance of 3.8 ...
Raman and Hall-effect characterization of Zn/sup +//P/sup +/ co-implanted GaAs subjected to rapid thermal annealing

URSAKI, V. V.; TERLETSKY, A. I.; TIGINYANU, I. M. (IEEE, 1998)

It is shown that Zn/sup +//P/sup +/ co-implantation in combination with rapid thermal annealing (RTA) allows one to obtain p-type GaAs layers with the peak hole concentration as high as 2.10/sup 19/ cm/sup -3/ and narrow ...
Zn/sup +//P/sup +/ and Zn/sup +//As/sup +/ co-implantation in InP single crystals

URSAKI, V. V.; TIGINYANU, I. M.; ICHIZLI, V. M.; TERLETSKY, A. I.; PYSHNAYA, N. B.; RADAUTSAN, S. I. (IEEE, 1996)

The activation efficiency of zinc impurity co-implanted with P/sup +/ and As/sup +/ ions in InP was studied by Hall-effect measurements. Both P/sup +/ and As/sup +/ co-implantations followed by post-implantation annealing ...

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