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Browsing by Subject "gallium nitride"

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11 - Ultra-thin membranes for sensor applications

TIGINYANU, I.; URSAKI, V.; POPA, V. (Woodhead Publishing, 2011)

Technological approaches for the fabrication of ultra-thin membranes for sensor applications are reviewed, with the main focus on graphene and two-dimensional (2D) sheets of layered compounds such as BN, MoS2, Bi2Te3, ...
Aero-Materials Based on Wide-Band-Gap Semiconductor Compounds for Multifunctional Applications: A Review

TIGINYANU, Ion; BRANISTE, Tudor (Springer Nature Switzerland, 2023)

The aim of this paper is to review the research efforts undertaken last years to develop novel hybrid three-dimensional micro-nano-architectures based on wide-band-gap binary compounds for multifunctional applications. ...
Characterization of GaN thin films and Eu-doped GaN nanowires and nanoparticles produced on the basis of Ga2O3 nanomaterial

RUSU, Emil; URSAKI, Veacheslav; CULEAC, Ion; SIMINEL, Anatolii; RAEVSCHI, Simion; VLAZAN, Paulina; NICORICI, Alexandr (Academia de Ştiinţe a Moldovei, 2016)

Due to advantageous properties such as wide bandgap, pronounced chemical and thermal stability, gallium nitride is currently considered as one of the most important semiconductor materials for practical applications. We ...
Comparison of ion-beam-assisted molecular beam epitaxy with conventional molecular beam epitaxy of thin hexagonal gallium nitride films

SIENZ, S.; GERLACH, J. W.; HÖCHE, T.; SIDORENKO, A.; MAYERHÖFER, T. G.; BENNDORF, G.; RAUSCHENBACH, B. (ELSEVIER, 2004)

Structural and electronic properties of hexagonal gallium nitride thin films on 6H–SiC, prepared by both low-energy ion-beam-assisted growth as well as molecular beam epitaxy (MBE), have been compared. According to X-ray ...
Directional and magnetic field enhanced emission of Cu-doped ZnO nanowires/p-GaN heterojunction light-emitting diodes

VIANA, Bruno; LUPAN, Oleg; PAUPORTÉ, Thierry (Society of Photo-Optical Instrumentation Engineers (SPIE), 2011)

The electrochemical deposition technique was used for the preparation of Cu-doped ZnO-nanowire-based emitters. Nanowires of high structural and optical quality were epitaxially grown on p-GaN single crystalline film ...
Effect of p-NiO interlayer on efficiency of p-GaN/n-ZnO LED devices

SIRKELI, Vadim P.; YILMAZOGLU, Oktay; KÜPPERS, Franko; HARTNAGEL, L. (Tehnica UTM, 2014)

We report on numerical study of the characteristics of p-GaN/n-ZnO light-emitting diodes with p-NiO interlayer, and on LED design optimization which includes bandgap engineering, thickness and doping of constituent layers. ...
Elaborarea suprafeţelor cu grad controlat de hidrofobie datorită nanomicrostructurării

BRANIȘTE, Fiodor; COBZAC, Vitalie; CIOBANU, Vladimir; PLEȘCO, Irina; BODAREV, Piotr; PÎSLARU, Ion (Agenţia de Stat pentru Proprietatea Intelectuală a Republicii Moldova (AGEPI), 2019)

Proiectul constă în elaborarea tehnologiei de obţinere a nanoparticulelor și a suprafeţelor nano/micro-structurate cu grad controlat de hidrofobie pentru utilizarea în medicină. Iniţial au fost obţinute nano-microstructuri ...
Electrical characterization and cathodoluminescence microanalysis of AlN/GaN heterostructures

HUBBARD, S. M.; PAVLIDIS, D.; VALIAEV, V.; STEVENS-KALCEFF, M. A.; TIGINYANU, I. M. (ELSEVIER, 2002)

Low-pressure MOCVD is used to grow AlN/GaN MIS-type heterostructures with AlN thickness between 3 and 35 nm. The two-dimensional electron gas (2DEG) Hall mobility was found to decrease with AlN thickness. The measured room ...
Enhanced efficiency of p-GaN/n-ZnO light-emitting diodes by using NiO and ZnSe interlayers

SIRKELI, V. P.; YILMAZOGLU, O.; KÜPPERS, F.; HARTNAGEL, H. L. (Technical University of Moldova, 2015)

We report the results from numerical simulations of p-GaN/n-ZnO light-emitting diodes (LEDs) with different architectures. p-GaN/n-ZnO, p-GaN/p-NiO/n-ZnO, and p-GaN/p-NiO/n-ZnSe/n-ZnO LED structures have been examinated ...
Extinderea suprafeţei membranelor ultra-subţiri în baza GaN în procesul de fabricare prin utilizarea litografiei cu sarcină de suprafaţă

BATÎRI, M.; CIOBANU, V.; BRANIŞTE, F.; MONAICO, E.; TIGINYANU, I. (Technical University of Moldova, 2015)

We propose for the implementation a cost effective technological route in the obtaining process of ultrathin GaN membranes. Our technique is based on the modified version of previously described Surface Charge Lithography ...
GaN nanostructuring for the fabrication of thin membranes and emerging applications

TIGINYANU, Ion; URSAKI, Veaceslav (TUBITAK, 2014)

We present a review of technological methods developed in recent years for the purpose of gallium nitride nanostructuring, with the main focus on fabrication of thin GaN membranes. In particular, we report on traditional ...
The Impact of High Energy Ion Irradiation Upon CO Gas Sensitivity of Nanostructured GaN Epilayers

VOLCIUC, O. S.; POPA, V.; TIGINYANU, I. M.; SKURATOV, V. A.; CHO, M.; PAVLIDIS, D. (Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau, Republic of Moldova, 2010)

Photoelectrochemically nanostructured GaN epilayers were found to exhibit good sensitivity towards CO in the temperature range from 180 to 280°C. We show that subjection of nanostructured GaN samples to 166 MeV Xe+23 ion ...
The Influence of Semiconductor Nanoparticles upon the Activity of Mesenchymal Stem Cells

BRANISTE, T.; COBZAC, V.; ABABII, P.; PLESCO, I.; RAEVSCHI, S.; DIDENCU, A.; MANIUC, M.; NACU, V.; ABABII, I.; TIGINYANU, I. (Tehnica UTM, 2019)

In this paper, we report on the viability and proliferation of mesenchymal stem cells after exposure to different types of semiconductor nanoparticles.
Mesenchymal stem cells proliferation and remote manipulation upon exposure to magnetic semiconductor nanoparticles

BRANISTE, Tudor; COBZAC, Vitalie; ABABII, Polina; PLESCO, Irina; RAEVSCHI, Simion; DIDENCU, Alexandru; MANIUC, Mihail; NACU, Viorel; ABABII, Ion; TIGINYANU, Ion (ELSEVIER, 2020)

In this paper, we report on spatial redistribution of bone marrow mesenchymal stem cells loaded with magnetic nanoparticles under the influence of continuously applied magnetic field. Semiconductor nanoparticles were ...
Nanodimensional AlN layers grown on silicon in the system H2-HCl-Al-NH3

RAEVSCHI, Simion; BOTNARIUC, Vasile; GORCEAC, Leonid; TIRON, Stefan; KOMPAN, Mihail; ZHILYAEV, Yurii (Tehnica UTM, 2013)

There were obtained nanodimensional AlN layers on Si by HVPE (Hydride Vapor Phase Epitaxy) method. SEM (Scanning Electron Microscopy) images of AlN layers, and cross-sections of AlN/Si structures are shown. The structure ...
New Areas of Research and Applications for GaN

TIGINYANU, Ion (Tehnica UTM, 2019)

Gallium nitride, a wide-bandgap semiconductor compound (Eg = 3.4 eV at 300 K), has in the last two decades registered a fascinating increase in the crystalline quality of epitaxial layers determining its leading role in ...
New take-off of Gallium Nitride

TIGINYANU, Ion (Technical University of Moldova, 2015)

Gallium Nitride (GaN) is a wide-band-gap semiconductor compound (Eg = 3.4 eV at 300 K) which over the last decades played a major role in the development of modern solid-state lighting industry. An intensive investigation ...
Self-organized and self-propelled aero-GaN with dual hydrophilic-hydrophobic behaviour

TIGINYANU, Ion; BRANISTE, Tudor; SMAZNA, Daria; DENG, Mao; SCHÜTT, Fabian; SCHUCHARDT, Arnim; STEVENS-KALCEFF, Marion A.; RAEVSCHI, Simion; SCHÜRMANN, Ulrich; KIENLE, Lorenz; PUGNO, Nicola M.; MISHRA, Yogendra Kumar; ADELUNG, Rainer (ELSEVIER, 2019)

Nature utilizes hydrophilic-hydrophobic biomolecular entities to perform self-organized structural and functional tasks, including the formation of cellular compartments and motion, separation of chemicals or self-healing ...
Sensing up to 40atm Using Pressure-Sensitive Aero-GaN

DRAGOMAN, Mircea; CIOBANU, Vladimir; SHREE, Sindu; DRAGOMAN, Daniela; BRANISTE, Tudor; RAEVSCHI, Simion; DINESCU, Adrian; SARUA, Andrei; MISHRA, Yogendra K.; PUGNO, Nicola; ADELUNG, Rainer; TIGINYANU, Ion (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2019)

This work reports on the fabrication and characterization of a robust pressure sensor based on aero-GaN. The ultraporous aeromaterial consists of GaN interconnected hollow micro-tetrapods with the wall thickness of about ...
Studiul interacţiunii celulelor vii cu nanoparticule în baza compuşilor semiconductori

PUTINĂ, Mihaela (Universitatea Tehnică a Moldovei, 2016)

Scopul lucrării constă în obţinerea nanostructurilor de GaN avînd la bază ZnO nanostructurat obținut prin metoda hidrotermală. Nanostructurarea nitrurii de galiu pentru aplicaţiile biomedicale, are la bază studiul interacţiunii ...

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