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Procedeu de obţinere a nanostructurilor semiconductoare

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dc.contributor Universitatea Tehnică a Moldovei
dc.contributor.author TIGHINEANU, Ion
dc.contributor.author SÎRBU, Lilian
dc.contributor.author URSACHI, Veaceslav
dc.contributor.author ALBU, Sergiu
dc.date.accessioned 2021-04-22T10:05:59Z
dc.date.available 2021-04-22T10:05:59Z
dc.date.issued 2006-02-28
dc.identifier.citation TIGHINEANU, Ion, SÎRBU, Lilian, URSACHI, Veaceslav et al. Procedeu de obţinere a nanostructurilor semiconductoare. Brevet MD 2982, CIB B82B 3/00, H01L 21/3063. Universitatea Tehnică a Moldovei. Nr. depozit: a 2005 0231. Data depozit: 2005.08.10. Data public.: 2006.02.28. In: BOPI. 2006, nr. 2. en_US
dc.identifier.other Nr. depozit: a 2005 0231
dc.identifier.uri http://www.db.agepi.md/Inventions/details/a%202005%200231
dc.identifier.uri http://81.180.74.21:8080/xmlui/handle/123456789/14365
dc.description.abstract Invenţia se referă la tehnologia semiconductorilor, în particular la procedee de obţinere a nanostructurilor semiconductoare. Procedeul de obţinere a nanostructurilor semiconductoare constă în decaparea electrochimică a suprafeţelor semiconductoare. en_US
dc.description.abstract The invention refers to the semiconductor technology, in particular to processes for obtaining semiconductor nanostructures. The process for obtaining semiconductor nanostructures consists in the electrochemical pickling of semiconductor surfaces. en_US
dc.language.iso ro en_US
dc.publisher Agenția de Stat pentru Proprietatea Intelectuală a Republicii Moldova en_US
dc.rights Brevet nevalabil. Data expirării brevetului: 2025.08.10. en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject invenţii en_US
dc.subject brevete de invenţie en_US
dc.subject semiconductori en_US
dc.subject nanostructuri semiconductoare en_US
dc.subject semiconductors en_US
dc.subject semiconductor nanostructures en_US
dc.subject.classification IPC: B82B 3/00 (2006.01) en_US
dc.subject.classification IPC: H01L 21/3063 (2006.01)
dc.title Procedeu de obţinere a nanostructurilor semiconductoare en_US
dc.type Patent en_US


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Brevet nevalabil. Data expirării brevetului: 2025.08.10. Except where otherwise noted, this item's license is described as Brevet nevalabil. Data expirării brevetului: 2025.08.10.

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