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The Impact of the Discreteness of Low-fluence Ion Beam Processing on the Spatial Architecture of GaN Nanostructures Fabricated by Surface Charge Lithography

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dc.contributor.author TIGINYANU, I. M.
dc.contributor.author VOLCIUC, O.
dc.contributor.author STEVENS-KALCEFF, M. A.
dc.contributor.author POPA, V.
dc.contributor.author GUTOWSKI, J.
dc.contributor.author WILLE, S.
dc.contributor.author ADELUNG, R.
dc.contributor.author FOLL, H.
dc.date.accessioned 2020-10-05T13:38:06Z
dc.date.available 2020-10-05T13:38:06Z
dc.date.issued 2013
dc.identifier.citation TIGINYANU, I. M., VOLCIUC, O., STEVENS-KALCEFF, M. A. et al. The Impact of the Discreteness of Low-fluence Ion Beam Processing on the Spatial Architecture of GaN Nanostructures Fabricated by Surface Charge Lithography. In: Электронная обработка материалов. 2013, nr. 1(49), pp. 1-3. ISSN 0013-5739. en_US
dc.identifier.uri http://repository.utm.md/handle/5014/10410
dc.description.abstract We show that the descrete nature of ion beam processing used as a component in the approach of surface charge lithography leads to spatial modulation of the edges of the GaN nanostructures such as nanobelts and nanoperforated membranes. According to the performed Monte Carlo simulations, the modulation of the nanostructure edges is caused by the stochastic spatial distribution of the radiation defects generated by the impacting ions and related recoils. The obtained results pave the way for direct visualization of the networks of radiation defects induced by individual ions impacting a solidstate material. en_US
dc.language.iso en en_US
dc.publisher Academia de Ştiinţe a Moldovei en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject nanostructures en_US
dc.subject nanobelts en_US
dc.subject nanoperforated membranes en_US
dc.subject radiation defects en_US
dc.title The Impact of the Discreteness of Low-fluence Ion Beam Processing on the Spatial Architecture of GaN Nanostructures Fabricated by Surface Charge Lithography en_US
dc.type Article en_US


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