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Noi tehnologii de nanostructurare a materialelor semiconductoare pentru dispositive electronice
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| dc.contributor.author | POPA, Veaceslav | |
| dc.contributor.author | VOLCIUC, Olesea | |
| dc.date.accessioned | 2020-10-06T10:23:23Z | |
| dc.date.available | 2020-10-06T10:23:23Z | |
| dc.date.issued | 2008 | |
| dc.identifier.citation | POPA, Veaceslav, VOLCIUC, Olesea. Noi tehnologii de nanostructurare a materialelor semiconductoare pentru dispositive electronice. In: Revista de Ştiinţă, Inovare, Cultură şi Artă „Akademos”. 2008, nr. 4(11), pp. 84-85. ISSN 1857-0461. | en_US |
| dc.identifier.uri | http://repository.utm.md/handle/5014/10458 | |
| dc.description.abstract | The article present the current level of performance in semiconductor technologies, in particular in those related to GaN processing. The advantages of GaN in comparison with classical semiconductors are evaluated by means of coefficient of merit. A novel maskless technology for GaN meso- and nanostructuring is demonstrated and possibilities for applications are discussed. | en_US |
| dc.language.iso | ro | en_US |
| dc.publisher | Academia de Științe a Moldovei | en_US |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
| dc.subject | dispozitive semiconductoare | en_US |
| dc.subject | nanostructuri | en_US |
| dc.subject | nitrură de galiu | en_US |
| dc.subject | optoelectronică | en_US |
| dc.subject | electronică de putere | en_US |
| dc.title | Noi tehnologii de nanostructurare a materialelor semiconductoare pentru dispositive electronice | en_US |
| dc.type | Article | en_US |
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