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Photoinduced modification of surface states in nanoporous InP observed by terahertz spectroscopy

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dc.contributor.author LLOYD-HUGHES, James
dc.contributor.author MUELLER, Susanne
dc.contributor.author SCALARI, Giacomo
dc.contributor.author BISHOP, Hugh
dc.contributor.author CROSSLEY, Alison
dc.contributor.author ENACHI, Mihai
dc.contributor.author SIRBU, Lilian
dc.contributor.author TIGINYANU, Ion
dc.date.accessioned 2020-11-09T10:26:08Z
dc.date.available 2020-11-09T10:26:08Z
dc.date.issued 2012
dc.identifier.citation LLOYD-HUGHES, James, MUELLER, Susanne, SCALARI, Giacomo et al. Photoinduced modification of surface states in nanoporous InP observed by terahertz spectroscopy. In: APS March Meeting: proceedings, 27 Febr. – 2 March 2012, Boston, Massachusetts, 2012, Vol. 57, Nr. 1, abstract ID. L18.010. en_US
dc.identifier.uri http://repository.utm.md/handle/5014/11221
dc.description Only Abstract en_US
dc.description.abstract A precise control of the surface properties of semiconductor nanomaterials is vital for their functionality and use in many opto-electronic applications. Terahertz time-domain spectroscopy allows the non-contact investigation of electron transport in semiconductor nanomaterials, without the complication of contact fabrication. The technique allows the photoconductivity to be determined on picosecond timescales, under the assumption that the material's properties are not permanently altered by photoexcitation. Here we demonstrate that this assumption is not always valid. We report an investigation of nanoporous honeycombs of n-type InP using terahertz time-domain and X-ray photoemission spectroscopies. After photoexcitation the dark conductivity was found to increase quasi-irreversibly, recovering only after several hours in air. The calculated electron density for different surface pinning energies suggests that photoexcitation may reduce the density of surface states. The photoinduced modification of porous semiconductors may be useful in material processing as it is a clean, dry, and area-selective method to increase the conductivity. en_US
dc.language.iso en en_US
dc.publisher American Physical Society en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject semiconductor nanomaterials en_US
dc.subject opto-electronic applications en_US
dc.subject porous semiconductors en_US
dc.subject semiconductors en_US
dc.subject nanomaterials en_US
dc.title Photoinduced modification of surface states in nanoporous InP observed by terahertz spectroscopy en_US
dc.type Article en_US


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