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Photoluminescence in ZnGa2O4

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dc.contributor.author ZHITAR, V.
dc.contributor.author URSAKI, Veacheslav
dc.contributor.author ARAMĂ, Efim
dc.contributor.author SHEMYAKOVA, Tatiana
dc.contributor.author MUNTEAN, Ştefan
dc.date.accessioned 2020-11-16T11:37:43Z
dc.date.available 2020-11-16T11:37:43Z
dc.date.issued 2005
dc.identifier.citation ZHITAR, V, URSAKI, Veacheslav, ARAMĂ, Efim et al. Photoluminescence in ZnGa2O4. In: Moldavian Journal of the Physical Sciences. 2005, nr. 4(4), pp. 412-414. ISSN 1810-648X. en_US
dc.identifier.uri http://repository.utm.md/handle/5014/11481
dc.description.abstract ZnGa2O4 compound has been prepared by a simple method of ceramic sintering. Its photoluminescence (PL) spectra have been studied using laser beam excitation (l = 334 nm) at 295 and 10 K. A blue-green long wavelength radiation band has been found out with the peak at 480 nm as well as a series of intensive narrow PL peaks centered at 687, 695, 708 and 714 nm (T = 295 K). The first band may be due to the defect material structure or the ZnO trace amount presence. The sharp peaks may appear due to impurities of rare-earth elements. en_US
dc.language.iso en en_US
dc.publisher Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject ceramic sintering en_US
dc.subject semiconductor compounds en_US
dc.subject light-emitting devices en_US
dc.subject nanostructured samples en_US
dc.title Photoluminescence in ZnGa2O4 en_US
dc.type Article en_US


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