Photoluminescence in ZnGa2O4

ZHITAR, V.; URSAKI, Veacheslav; ARAMĂ, Efim; SHEMYAKOVA, Tatiana; MUNTEAN, Ştefan

dc.contributor.author	ZHITAR, V.
dc.contributor.author	URSAKI, Veacheslav
dc.contributor.author	ARAMĂ, Efim
dc.contributor.author	SHEMYAKOVA, Tatiana
dc.contributor.author	MUNTEAN, Ştefan
dc.date.accessioned	2020-11-16T11:37:43Z
dc.date.available	2020-11-16T11:37:43Z
dc.date.issued	2005
dc.identifier.citation	ZHITAR, V, URSAKI, Veacheslav, ARAMĂ, Efim et al. Photoluminescence in ZnGa2O4. In: Moldavian Journal of the Physical Sciences. 2005, nr. 4(4), pp. 412-414. ISSN 1810-648X.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/11481
dc.description.abstract	ZnGa2O4 compound has been prepared by a simple method of ceramic sintering. Its photoluminescence (PL) spectra have been studied using laser beam excitation (l = 334 nm) at 295 and 10 K. A blue-green long wavelength radiation band has been found out with the peak at 480 nm as well as a series of intensive narrow PL peaks centered at 687, 695, 708 and 714 nm (T = 295 K). The first band may be due to the defect material structure or the ZnO trace amount presence. The sharp peaks may appear due to impurities of rare-earth elements.	en_US
dc.language.iso	en	en_US
dc.publisher	Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	ceramic sintering	en_US
dc.subject	semiconductor compounds	en_US
dc.subject	light-emitting devices	en_US
dc.subject	nanostructured samples	en_US
dc.title	Photoluminescence in ZnGa2O4	en_US
dc.type	Article	en_US