Полупроводниковые Свойства в Размерноограниченных Объектах Bi0,88Sb0,12

dc.contributor.author	POPOV, I. A.
dc.date.accessioned	2020-11-26T15:17:49Z
dc.date.available	2020-11-26T15:17:49Z
dc.date.issued	2015
dc.identifier.citation	POPOV, I. A. Полупроводниковые Свойства в Размерноограниченных Объектах Bi0,88Sb0,12. In: Telecomunicaţii, Electronică şi Informatică: proc. of the 5th intern. conf., May 20-23, 2015. Chişinău, 2015, pp. 123-124. ISBN 978-9975-45-377-6.	en_US
dc.identifier.isbn	978-9975-45-377-6
dc.identifier.uri	http://repository.utm.md/handle/5014/11789
dc.description.abstract	In this work was studied the charge carrier concentration of film single crystals. The measurements were made at temperature T=4.2 – 300 K. The thickness of the samples ranged from 0.2 mkm to 1.3 mkm. It was found that n~AT2.3. It allows to conclude that film single crystals Bi0,88Sb0,12 possess semiconducting properties.	en_US
dc.language.iso	ru	en_US
dc.publisher	Technical University of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	плёнки	en_US
dc.subject	запрещённая зона	en_US
dc.subject	температура	en_US
dc.subject	толщина	en_US
dc.subject	концентрация носителей	en_US
dc.title	Полупроводниковые Свойства в Размерноограниченных Объектах Bi0,88Sb0,12	en_US
dc.type	Article	en_US