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Полупроводниковые Свойства в Размерноограниченных Объектах Bi0,88Sb0,12

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dc.contributor.author POPOV, I. A.
dc.date.accessioned 2020-11-26T15:17:49Z
dc.date.available 2020-11-26T15:17:49Z
dc.date.issued 2015
dc.identifier.citation POPOV, I. A. Полупроводниковые Свойства в Размерноограниченных Объектах Bi0,88Sb0,12. In: Telecomunicaţii, Electronică şi Informatică: proc. of the 5th intern. conf., May 20-23, 2015. Chişinău, 2015, pp. 123-124. ISBN 978-9975-45-377-6. en_US
dc.identifier.isbn 978-9975-45-377-6
dc.identifier.uri http://repository.utm.md/handle/5014/11789
dc.description.abstract In this work was studied the charge carrier concentration of film single crystals. The measurements were made at temperature T=4.2 – 300 K. The thickness of the samples ranged from 0.2 mkm to 1.3 mkm. It was found that n~AT2.3. It allows to conclude that film single crystals Bi0,88Sb0,12 possess semiconducting properties. en_US
dc.language.iso ru en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject плёнки en_US
dc.subject запрещённая зона en_US
dc.subject температура en_US
dc.subject толщина en_US
dc.subject концентрация носителей en_US
dc.title Полупроводниковые Свойства в Размерноограниченных Объектах Bi0,88Sb0,12 en_US
dc.type Article en_US


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