Gunn Diodes Based on Graded-Gap Semiconductor Nitrides with Boron Nitride

Abstract

The paper presents the results of numerical experiments on the oscillation generation using the n+-n-n+ transfer electron device based on InBN and GaBN graded gap semiconductor compounds at different BN distribution. We had obtained the output characteristics of diodes in a wide range of frequencies from 30 to 700 GHz. Cutoff frequency has been estimated. At optimal BN distribution graded-gap semiconductor InBN and GaBN Gunn diodes for efficiency exceed GaN and InN diodes by more than two times. Power consumption of graded-gap InBN and GaBN diodes is 11:19% less the power consumption of InN аnd GaN diodes.