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Gunn Diodes Based on Graded-Gap Semiconductor Nitrides with Boron Nitride

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dc.contributor.author STOROZHENKO, I. P.
dc.contributor.author TIMANYUK, V. A.
dc.contributor.author YAROSHENKO, A. N.
dc.contributor.author ARKUSHA, Yu. V.
dc.date.accessioned 2020-11-26T16:15:43Z
dc.date.available 2020-11-26T16:15:43Z
dc.date.issued 2015
dc.identifier.citation STOROZHENKO, I. P., TIMANYUK, V. A., YAROSHENKO, A. N., ARKUSHA, Yu. V. Gunn Diodes Based on Graded-Gap Semiconductor Nitrides with Boron Nitride. In: Telecomunicaţii, Electronică şi Informatică: proc. of the 5th intern. conf., May 20-23, 2015. Chişinău, 2015, pp. 151-154. ISBN 978-9975-45-377-6. en_US
dc.identifier.isbn 978-9975-45-377-6
dc.identifier.uri http://repository.utm.md/handle/5014/11796
dc.description.abstract The paper presents the results of numerical experiments on the oscillation generation using the n+-n-n+ transfer electron device based on InBN and GaBN graded gap semiconductor compounds at different BN distribution. We had obtained the output characteristics of diodes in a wide range of frequencies from 30 to 700 GHz. Cutoff frequency has been estimated. At optimal BN distribution graded-gap semiconductor InBN and GaBN Gunn diodes for efficiency exceed GaN and InN diodes by more than two times. Power consumption of graded-gap InBN and GaBN diodes is 11:19% less the power consumption of InN аnd GaN diodes. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject terahertz range en_US
dc.subject transfer electron device en_US
dc.subject graded-gap semiconductor en_US
dc.subject nitride semiconductor en_US
dc.subject boron nitride en_US
dc.title Gunn Diodes Based on Graded-Gap Semiconductor Nitrides with Boron Nitride en_US
dc.type Article en_US


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