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| dc.contributor.author | STOROZHENKO, I. P. | |
| dc.contributor.author | TIMANYUK, V. A. | |
| dc.contributor.author | YAROSHENKO, A. N. | |
| dc.contributor.author | ARKUSHA, Yu. V. | |
| dc.date.accessioned | 2020-11-26T16:15:43Z | |
| dc.date.available | 2020-11-26T16:15:43Z | |
| dc.date.issued | 2015 | |
| dc.identifier.citation | STOROZHENKO, I. P., TIMANYUK, V. A., YAROSHENKO, A. N., ARKUSHA, Yu. V. Gunn Diodes Based on Graded-Gap Semiconductor Nitrides with Boron Nitride. In: Telecomunicaţii, Electronică şi Informatică: proc. of the 5th intern. conf., May 20-23, 2015. Chişinău, 2015, pp. 151-154. ISBN 978-9975-45-377-6. | en_US |
| dc.identifier.isbn | 978-9975-45-377-6 | |
| dc.identifier.uri | http://repository.utm.md/handle/5014/11796 | |
| dc.description.abstract | The paper presents the results of numerical experiments on the oscillation generation using the n+-n-n+ transfer electron device based on InBN and GaBN graded gap semiconductor compounds at different BN distribution. We had obtained the output characteristics of diodes in a wide range of frequencies from 30 to 700 GHz. Cutoff frequency has been estimated. At optimal BN distribution graded-gap semiconductor InBN and GaBN Gunn diodes for efficiency exceed GaN and InN diodes by more than two times. Power consumption of graded-gap InBN and GaBN diodes is 11:19% less the power consumption of InN аnd GaN diodes. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Technical University of Moldova | en_US |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
| dc.subject | terahertz range | en_US |
| dc.subject | transfer electron device | en_US |
| dc.subject | graded-gap semiconductor | en_US |
| dc.subject | nitride semiconductor | en_US |
| dc.subject | boron nitride | en_US |
| dc.title | Gunn Diodes Based on Graded-Gap Semiconductor Nitrides with Boron Nitride | en_US |
| dc.type | Article | en_US |
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