Record Single-Mode Power of 1300 nm-Wavelength VCSELs

dc.contributor.author	CALIMAN, A.
dc.date.accessioned	2020-11-26T16:30:04Z
dc.date.available	2020-11-26T16:30:04Z
dc.date.issued	2015
dc.identifier.citation	CALIMAN, A. Record Single-Mode Power of 1300 nm-Wavelength VCSELs. In: Telecomunicaţii, Electronică şi Informatică: proc. of the 5th intern. conf., May 20-23, 2015. Chişinău, 2015, pp. 166-168. ISBN 978-9975-45-377-6.	en_US
dc.identifier.isbn	978-9975-45-377-6
dc.identifier.uri	http://repository.utm.md/handle/5014/11798
dc.description.abstract	Record-high fundamental mode output power of 6.8 mW at 20 ºC achieved with wafer-fused VCSELs emitting at 1300 nm is reported in this paper. VCSEL contains an InAlGaAs-InP active with buried tunnel junction and undoped AlGaAs/GaAs Distributed Bragg Reflectors. This performance positions wafer-fused VCSELs as prime candidates for many applications in low power consumption, “green” photonics.	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	wafer fusion	en_US
dc.subject	long wavelength	en_US
dc.subject	VCSEL	en_US
dc.title	Record Single-Mode Power of 1300 nm-Wavelength VCSELs	en_US
dc.type	Article	en_US