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Record Single-Mode Power of 1300 nm-Wavelength VCSELs

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dc.contributor.author CALIMAN, A.
dc.date.accessioned 2020-11-26T16:30:04Z
dc.date.available 2020-11-26T16:30:04Z
dc.date.issued 2015
dc.identifier.citation CALIMAN, A. Record Single-Mode Power of 1300 nm-Wavelength VCSELs. In: Telecomunicaţii, Electronică şi Informatică: proc. of the 5th intern. conf., May 20-23, 2015. Chişinău, 2015, pp. 166-168. ISBN 978-9975-45-377-6. en_US
dc.identifier.isbn 978-9975-45-377-6
dc.identifier.uri http://repository.utm.md/handle/5014/11798
dc.description.abstract Record-high fundamental mode output power of 6.8 mW at 20 ºC achieved with wafer-fused VCSELs emitting at 1300 nm is reported in this paper. VCSEL contains an InAlGaAs-InP active with buried tunnel junction and undoped AlGaAs/GaAs Distributed Bragg Reflectors. This performance positions wafer-fused VCSELs as prime candidates for many applications in low power consumption, “green” photonics. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject wafer fusion en_US
dc.subject long wavelength en_US
dc.subject VCSEL en_US
dc.title Record Single-Mode Power of 1300 nm-Wavelength VCSELs en_US
dc.type Article en_US


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